Sb基nBn型红外探测器发展现状

nBn结构红外探测器具有可消除SRH产生-复合电流和表面复合电流,实现高温工作等优点,从提出就备受全球多个研究机构青睐,并已经得到组件验证。锑基nBn结构红外探测器发展尤其迅速,已经在技术上得到突破,部分产品已经获得应用,红外探测器组件最高工作温度达150 K以上。本文从nBn结构锑基红外探测器工作原理、结构优势和国外发展现状等方面对该研究方向进行了综述报道,为高工作温度、高性能红外焦平面探测器发展提供了较好方向。

Development status of Sb-based nBn infrared detector

The nBn structure design for infrared detector can be used to eliminate both Shockley-Read-Hall generation currents and surface recombination currents,which will lead to a higher operating temperature,so it has attracted the attention of many research institutions around the world.The Sb-based nBn structure infrared detector has developed rapidly,and some infrared detectors with this structure have achieved the working temperature of 150K or more.The working principle of Sb-based nBn infrared detector,structural advantages and development status are summarized,which provides a good prediction for the future development of high temperature and high performance infrared focal plane detector.