| 3英寸CdTe/Si复合衬底外延技术研究 |
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| 引用本文： | 周立庆,刘铭,巩锋,董瑞清,折伟林,常米.3英寸CdTe/Si复合衬底外延技术研究[J].激光与红外,2011,41(5):537-541. |
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| 作者姓名： | 周立庆 刘铭 巩锋 董瑞清 折伟林 常米 |
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| 作者单位： | 华北光电技术研究所,北京,100015 |
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| 摘 要： | 报道了采用分子束外延法,在3 in硅衬底上通过As钝化、ZnTe缓冲层生长、CdTe生长、周期性退火等工艺进行CdTe/Si复合衬底制备技术研究情况,采用光学显微镜、X射线高分辨衍射仪、原子力显微镜、红外傅里叶光谱仪和湿化学腐蚀等手段对碲化镉薄膜进行了表征,测试分析结果表明碲化镉薄膜的晶向得到了较好的控制,孪晶得到了抑...
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| 关 键 词： | 碲化镉 硅基 分子束外延 |
Study on MBE CdTe layer on 3 inch silicon substrate |
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| ZHOU Li-qing,LIU Ming,GONG Feng,DONG Rui-qing,SHE Wei-lin,CHANG Mi.Study on MBE CdTe layer on 3 inch silicon substrate[J].Laser & Infrared,2011,41(5):537-541. |
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| Authors: | ZHOU Li-qing LIU Ming GONG Feng DONG Rui-qing SHE Wei-lin CHANG Mi |
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| Affiliation: | ZHOU Li-qing,LIU Ming,GONG Feng,DONG Rui-qing,SHE Wei-lin,CHANG Mi(North China Research Institute of Electro-Optics,Beijing 100015,China) |
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| Abstract: | CdTe(211)B films were grown by molecular beam epitaxy on As-passivated nominal three-inch Si(211)wafer using thin interfacial ZnTe(211)B buffer layer,and in-situ cyclic annealing has been used during CdTe deposition to improved crystal quality.The CdTe films were characterized with Optical microscopy,X-ray diffraction,AFM,FTIR and wet chemical defect etching.The results indicate that the CdTe(112)B films has good crystal quality,excellent uniformity over three-inch area,twin-free and the crystalline orienta... |
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| Keywords: | CdTe Si MBE |
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