分子束外延InSb薄膜缺陷分析

实现高温工作已经成为了第三代红外探测器的重要发展方向。为了达到这个目标,首先要降低探测器材料的各种缺陷。本文主要研究了不同生长条件对InSb分子束外延薄膜的晶体质量的影响,并采用金相显微镜、X射线双晶衍射仪、扫描电子显微镜及X射线能谱仪等检测手段对外延膜缺陷进行了研究,综合分析了各缺陷的特征、起因、消除方法等。通过优化外延条件,外延膜宏观生长缺陷最低值达到483 cm-2。

Analysis of defects on InSb film grown by MBE

High operating temperature detector has become a significant direction of the 3rd generation infrared detectors. In order to achieve this aim,defects on the detector materials must be reduced. In this paper,the effect of different experimental conditions on InSb wafers grown by molecular beam epitaxy is studied,metallographic microscope,scanning electron microscope and X-ray double crystal diffraction are used to study the defects. The characteristics,origination and eliminating methods of these defects are analyzed. By MBE optimization,the best defect density has reached 483 cm-2.