Ⅲ族氮化物紫外探测器及其研究进展

文中简单介绍了紫外波段光电探测的基本特点,包括各波段特点、大气吸收等,并粗略 介绍了紫外探测的部分应用。然后对Ⅲ族氮化物宽禁带紫外探测器材料体系的研究进展进行了回顾,重点介绍了包括P型材料的制备、金属半导体接触、材料的蚀刻等方面;最后,对国内外近期的紫外探测器特别是紫外焦平面器件的研究进展作了一些评述。

Ⅲ-Nitride Ultraviolet Photodetectors and the Research Development

The research progress of HI-Nitride promotes the development and the application of all kind GaN-based devices. Especially,the GaN-based ultraviolet photo-detector can adjust the cut-off wavelength through changing the AI content in the AI, Ga1-xN materials. And the AlxGa1-xN with high AI content can be used to fabricate the solar-blind photo-detectors,which induces our attention greatly. The basic characters of the ultraviolet photo-detector,including the ultraviolet wavelength and atmosphere absorption, etc, are presented briefly. Then, the GaN-based Photo-detector device research progress is reviewed, such as the P-GaN doping, metal-semi contact and etching problems, etc. Finally,the resent developments of the ultraviolet detector, especially the ultraviolet FPA, are introduced.