MEE生长参数对复合衬底材料质量的影响

Si基CdTe中ZnTe缓冲层的生长影响着材料表面粗糙度和半峰宽。本文为了验证分子束外延Si基CdTe中采用迁移增强外延(MEE)技术生长的ZnTe缓冲层的生长参数对复合衬底材料表面粗糙度和半峰宽的影响，对涉及到的MEE生长过程中的主要参数包括：Zn与Te数值比、MEE生长温度、Zn与Te束流强度值进行研究，设计了三组实验，并使用高分辨X光衍射仪、白光干涉仪和红外傅里叶光谱仪测试外延薄膜生长结果，总结MEE生长参数对复合衬底材料质量影响，通过实验得到最优的外延工艺条件，提高材料质量。

The influence of MEE growth parameters on the quality of composite substrate materials

The growth of the ZnTe buffer layer in Si based CdTe affects the surface roughness and FWHM of the material.In this paper,in order to verify the influence of the growth parameters of the ZnTe buffer layer grown by the migration enhanced epitaxy (MEE) technology in the molecular beam epitaxy Si based CdTe on the surface roughness and FWHM of the composite substrate material,the main parameters involved in the MEE growth process including Zn to Te numerical ratio,MEE growth temperature,Zn and Te beam intensity value are investigated.Three sets of experiments are designed,and high resolution X ray diffractometer,white light interferometer and infrared Fourier spectrometer are used to test the growth results of the epitaxial film and the influence of MEE growth parameters on the quality of composite substrate materials is summarized.The optimal epitaxial process conditions are obtained by experiments to improve the material quality.