量子阱红外探测器掺杂阱中能级的计算

量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。为了提供足够的载流子跃迁,阱层一般为重掺杂层。重掺杂使半导体材料禁带宽度变窄,从而改变量子阱中能级的位置。通过对不同温度、量子阱区不同掺杂浓度条件下的量子阱材料PL 谱进行测量,得出PL 谱峰值波长对应的电子跃迁峰值能量,它与阱中基态能级的位置有关。分别计算了考虑和不考虑禁带变窄效应时的电子跃迁峰值能量,并与实验结果相比较,可以看出考虑禁带变窄效应时与实验结果相吻合,因此掺杂量子阱区能级的计算需要考虑禁带变窄效应,这样可以较为精确的得出阱中能级的位置。

Energy Level Calculation of Doping Quantum Well for QWIP

Achieving the energy level position in quantum wells of quantum well infrared photodetectors (QWIPs) is the base of designing QWIP other parameters. In order to get sufficient carriers ,the quantumwells are often heavily doped. The heavily doping will narrow the forbidden gap and change the energy level in quantum wells. PL spectrumof QWIPs material at different temperature and doping concentration were maesured. The maximum of electron transition energy was obtained ,which is corresponded with the maximum of PL spectrum and is related with the position of the ground state energy level in quantum wells. The maximum of electron transition energy was respectively calculated when the effect of forbidden gap narrowing was considered or not.We contrasted the calculation result with the experimental result. The calculation result considering the forbidden gap narrowing is exactly corresponded with the experimental result. Therefore ,when forbidden gap narrowing is considered ,we can get more accurate energy level position in the heavily doping quantum wells.