| 基于热扩散制备平面PN结InSb红外焦平面芯片 |
| |
| 引用本文： | 亢喆,邱国臣.基于热扩散制备平面PN结InSb红外焦平面芯片[J].激光与红外,2014,44(7):757-762. |
| |
| 作者姓名： | 亢喆 邱国臣 |
| |
| 作者单位： | 华北光电技术研究所,北京 100015 |
| |
| 摘 要： | 研究了一种基于在锑化铟衬底材料上以热扩散工艺制备平面PN结的红外焦平面阵列(IRFPA)探测器芯片结构及其工艺流程。根据锑化铟材料的特性设计了新的焦平面器件制备流程,选择了等离子增强化学气相淀积(PECVD)淀积的非晶氧化硅(SiO2)、氮氧化硅(SiON)薄膜作为扩散工艺中的掩膜材料。在此基础上制备出了具有较好的I-V特性曲线的焦平面芯片。
|
| 关 键 词： | 锑化铟 红外焦平面阵列探测器 平面PN结 热扩散 |
InSb IRFPA detector chip with planar PN junction based on thermal diffusion method |
| |
| KANG Zhe,QIU Guo-chen.InSb IRFPA detector chip with planar PN junction based on thermal diffusion method[J].Laser & Infrared,2014,44(7):757-762. |
| |
| Authors: | KANG Zhe QIU Guo-chen |
| |
| Affiliation: | North China Research Institute of Electro-optic,Beijing 100015,China |
| |
| Abstract: | An infrared focal plane arrays (IRFPA)detector chip structure and technological process with planar PN junction on InSb substrate based on thermal diffusion method is studied. A new IRFPA device preparation process is designed according to material characteristics of InSb. Amorphous silicon dioxide (SiO2),silicon oxynitride (SiON)thin film deposited by plasma enhanced chemical vapor deposition (PECVD)is chosen as mask in thermal diffusion method. Based on these,focal plane chip with better I-V characteristic curve is prepared. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《激光与红外》浏览原始摘要信息 |
|
点击此处可从《激光与红外》下载全文 |
|
