| GaN基紫外探测器发展概况 |
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| 引用本文： | 刘万金,胡小燕,喻松林.GaN基紫外探测器发展概况[J].激光与红外,2012,42(11):1210-1214. |
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| 作者姓名： | 刘万金 胡小燕 喻松林 |
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| 作者单位： | 华北光电技术研究所,北京,100015 |
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| 摘 要： | 基于宽禁带半导体材料的GaN基紫外探测器由于具有探测波长可调、工艺兼容性好、结构可多型化等优点,已成为近年来的研究热点。介绍了四种不同结构类型的紫外探测器:光导型、肖特基势垒、金属-半导体-金属、p-i-n结,并回顾了GaN基紫外探测器的的研究历程。
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| 关 键 词： | GaN 紫外探测器 光电二极管 |
Development overview of GaN-based ultraviolet detector |
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| LIU Wan-jin,HU Xiao-yan,YU Song-lin.Development overview of GaN-based ultraviolet detector[J].Laser & Infrared,2012,42(11):1210-1214. |
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| Authors: | LIU Wan-jin HU Xiao-yan YU Song-lin |
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| Affiliation: | North China Research Institute of Electro-optics,Beijing 100015,China |
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| Abstract: | GaN-based wide bandgap semiconductor ultraviolet detector has become a research hotspot in recent years due to its many advantages such as adjustable response wavelength,good process compatibility and diverse structure applicability.This paper introduces four different types of UV detector:photoconductor,Schottky,MSM and p-i-n.The history of GaN-based ultraviolet detector is reviewed and discussed. |
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| Keywords: | GaN UV detector photodiode |
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