3英寸Si基碲镉汞分子束外延工艺研究

随着红外焦平面阵列规模的扩大,由于尺寸和成本的限制,传统晶格匹配的碲锌镉衬底逐渐成为碲镉汞红外焦平面探测器发展的瓶颈,大尺寸、低成本硅基碲镉汞材料应运而生。本文采用分子束外延工艺生长获得了3 in Si基中波碲镉汞薄膜材料,通过采用金相显微镜、傅里叶红外光谱仪、双晶X射线衍射仪、湿化学腐蚀位错密度(EPD)法、Hall测试系统等检测手段对Si基中波碲镉汞分子束外延薄膜材料进行表面、光学、结构和电学性能表征,并采用标准平面器件工艺制备中波640×512焦平面探测阵列进行材料验证,结果表明该材料性能与国际先进水平相当。

Research on molecular beam epitaxy growth HgCdTe film on 3 in Si based substrate

The traditional lattice matched CdZnTe substrate for HgCdTe infrared focal plane arrays becomes an bottle neck gradually due to current size and cost limitation of bulk CdZnTe.As larger infrared focal plane array sizes are required for future devices,large area Si based substrates will become a requirement for HgCdTe growth in order to obtain the cost-efficiency of future systems.This paper reports the growth of MWIR HgCdTe material on 3 in CdTe/Si substrates by Molecular Beam Epitaxy technology.The optical,electrical and structural properties of epi-layers with smooth surface morphology was measured with Optical microscope,Fourier transform infrared spectrometer,X-ray diffraction rocking curve,Etch-pit density and Hall system.640×512 arrays were fabricated from this material and imaging was demonstrated.All the results indicate the properties of this material has achieved top level in the world.