晶格失配对InAs基室温中波红外探测器性能的影响

采用液相外延技术生长了InAs基室温红外探测器件材料，通过光学显微镜、扫描电子显微镜、X射线衍射仪分析了外延材料表面形貌、截面形貌与晶格失配的关系。分析发现，不恰当的晶体晶格常数匹配度会导致材料表面形貌变差，降低材料的结晶质量，晶格失配在0.22%左右的InAs基外延材料表面形貌较好，缺陷少，晶体质量较好。在此基础上，成功制备出室温探测率D^*为6.8×10⁹ cm·Hz^1/2·W^-1的InAs基室温中波红外探测器，这一性能与国际上红外探测器领军企业美国Teledyne Judson Technologies和日本滨松株式会社的商用InAs基红外探测器性能处于同等水平。

Effects of lattice mismatch on performance of InAs based room temperature mid infrared detector

InAs based room temperature infrared detector are grown by liquid phase epitaxy(LPE),and the relationship between surface morphology,cross sectional morphology and lattice mismatch of epilayers is analyzed by optical microscope,scanning electron microscope(SEM) and X ray diffractometer(XRD).The results show that unsuitable lattice mismatch lead to the deterioration of surface morphology and reduce crystallization quality of InAsSbP epilayer.InAsSbP epilayers with lattice mismatch around 0.22% have better surface morphology,few defects and better crystallization quality.On this basis,an InAs based mid wave infrared detector with the room temperature detectivity(D*) of 6.8×109cm·Hz 1/2·W -1 is successfully prepared.This performance is at the same level as comparable to that of commercial InAs based infrared detector from international leaders Teledyne Judson Technologies(USA) and Hamamatsu Corporation(Japan).