GaAs/InGaAs量子点探测器件微光读出研究

GaAs/InGaAs量子点光电探测器,在633 nm激光辐射3.5 nW条件下,器件偏压-1.4 V时,测得响应电流8.9×10-9A,电流响应率达到2.54 A/W,量子注入效率超过90%。基于GaAs/InGaAs量子点光电探测器的高量子注入效率、高灵敏度等特点,采用具有稳定的电压偏置,高注入效率和低噪声特点的CTIA(电容互阻跨导放大器)作为列放大器读出结构,输出部分采用相关双采样(CDS)结构去除系统和背景噪声。实验结果表明,在3.5 nW的微光辐射下,器件偏压为-2.5 V时,50μm×50μm像素探测器与读出电路互联后有7.14×107V/W的电压响应率。

Readout of InGaAs/GaAs quantum dot photodetector on weak-light

When-1.4 V bias and 3.5 nW 633 nm laser radiation are applied,the GaAs / InGaAs quantum dot-in-well photodetector can get 8.9×10-9 A response current and the current responsivity is 2.54 A/W.Its quantum efficiency is above 90%.Based on the photoelectric characteristics of the InGaAs/GaAs Quantum dot Photodetector,a stable bias,high inject efficiency and low noise CTIA readout circuit has been designed,which applies correlated double sampling(CDS) to the output of the CTIA circuit.Experiment results show that the readout circuit works well and the voltage responsivity can reach 7.14×107 V/W when the 50 μm×50 μm pixel device is biased with-2.5 V and radiated with 3.5 nW laser power.