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CdZnTe衬底对碲镉汞气相外延表面形貌的影响
引用本文:王仍,焦翠灵,张莉萍,张可锋,陆液,杜云辰,邵秀华,林杏潮,李向阳.CdZnTe衬底对碲镉汞气相外延表面形貌的影响[J].激光与红外,2015,45(9):1064-1067.
作者姓名:王仍  焦翠灵  张莉萍  张可锋  陆液  杜云辰  邵秀华  林杏潮  李向阳
作者单位:中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,上海 200083
基金项目:国家自然科学基金(No.61106097;No.61204134;No.11304335);中科院三期创新项目(No.CX-26);中国载人航天工程资助
摘    要:利用气相外延技术在CdZnTe衬底上生长Hg1-xCdxTe薄膜材料,通过在不同晶向、不同极性、不同晶向偏离角度CdZnTe衬底上的外延结果发现,CdZnTe衬底对外延形貌的影响非常大。(111)面衬底上外延形貌明显优于(211)面衬底的外延形貌。对于同是<111>CdZnTe晶向的衬底,(111)Cd面CdZnTe衬底上的外延形貌明显优于(111)Te面。对于(111)Cd面CdZnTe衬底,当晶向偏离角度不同时,其外延形貌也有差异,晶向偏离角越小表面形貌越好。

关 键 词::Hg1-xCdxTe晶体  CdZnTe衬底  (111)Cd面  (111)Te面

Influence of CdZnTe substrateon surface topography of Hg1-xCdxTe by vapor phase epitaxial
WANG Reng,JIAO Cui-ling,ZHANG Li-ping,ZHANG Ke-feng,LU Ye,DU Yun-chen,SHAO Xiu-hu,LIN Xing-chao,LI Xiang-yang.Influence of CdZnTe substrateon surface topography of Hg1-xCdxTe by vapor phase epitaxial[J].Laser & Infrared,2015,45(9):1064-1067.
Authors:WANG Reng  JIAO Cui-ling  ZHANG Li-ping  ZHANG Ke-feng  LU Ye  DU Yun-chen  SHAO Xiu-hu  LIN Xing-chao  LI Xiang-yang
Affiliation:Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
Abstract:Hg1-xCdxTe epitaxial layers were grown on CdZnTe substrate by vapor phase epitaxial method.Seeing from Hg1-xCdxTe epitaxial layers growth on different crystal orientation,polarity and deviation angle of CdZnTe substrates,CdZnTe substrate has the large influence on surface topography.The surface topography of Hg1-xCdxTe epitaxial layers on(111) surface is superior to that on(211) surface.For <111> crystallographic orientation of CdZnTe substrate,the surface topography of Hg1-xCdxTe epitaxial layer on(111) Cd surface is superior to that on(111) Te surface.For(111) Cd surface,the surface topography of epitaxial layers is different when deviation angle of(111) CdZnTe crystallographic orientation is different.The surface topography is good when the deviation angle of(111) CdZnTe is very small.
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