| 用于智能功率集成电路的PTG-LDMOST |
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| 引用本文： | 成建兵,张波,李肇基.用于智能功率集成电路的PTG-LDMOST[J].中国集成电路,2011,20(12):51-54,59. |
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| 作者姓名： | 成建兵 张波 李肇基 |
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| 作者单位： | 1. 南京邮电大学微电子系,南京,210046
2. 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 摘 要： | 提出一种用于智能功率集成电路的基于绝缘体上硅(SOI)的部分槽栅横向双扩散MOS晶体管(PTG-LDMOST)。PTG-LDMOST由传统的平面沟道变为垂直沟道,提高了器件击穿电压与导通电阻之间的折衷。垂直沟道将开态电流由器件的表面引向体内降低了导通电阻,而且关态的时候耗尽的JFET区参与耐压,提高单位漂移区长度击穿电压。仿真结果表明:对于相同的10微米漂移区长度,新结构的击穿电压从常规结构的111V增大到192V,增长率为73%。
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| 关 键 词： | SOI PTG-LDMOST 击穿电压 导通电阻 |
A PTG-LDMOST for the Smart Power ICs Amplification |
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| CHENG Jian-bing,ZHANG Bo,Li Zhao-ji.A PTG-LDMOST for the Smart Power ICs Amplification[J].China Integrated Circuit,2011,20(12):51-54,59. |
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| Authors: | CHENG Jian-bing ZHANG Bo Li Zhao-ji |
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| Affiliation: | CHENG Jian-bing1,ZHANG Bo2,Li Zhao-ji2(1.Department of Microelectronics,Nanjing University of Posts and Communications,Nanjing,210046,China,2.State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu,610054,China) |
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| Abstract: | A new partial trench gate lateral Double-diffused MOS transistor on SOI for smart power ICs is proposed.The PTG-LDMOST changes the channel from lateral to vertical and the trade-off between the breakdown voltage and the on-resistance is improved.The on-state current transportation is changed from the device surface to the bulk of drift region because of the vertical channel.As a result,the on-resistance is decreased.Furthermore,in off-state,the breakdown voltage per drift region length is improved due to th... |
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| Keywords: | SOI PTG-LDMOST Breakdown voltage On-resistance |
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