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应用于S波段AESA的射频收发前端设计
引用本文:王晓东,段宗明,周倩,王曾祺,李智群.应用于S波段AESA的射频收发前端设计[J].中国集成电路,2013,22(8):28-35.
作者姓名:王晓东  段宗明  周倩  王曾祺  李智群
作者单位:1. 中国电子科技集团公司第三十八研究所,安徽合肥,230088
2. 东南大学,江苏南京,210096
摘    要:采用0.18μm Si RFCMOS工艺设计了应用于s波段AESA的高集成度射频收发前端芯片。系统由发射与接收前端组成,包括低噪声放大器、混频器、可变增益放大器、驱动放大器和带隙基准电路。后仿真结果表明,在3.3V电源电压下,发射前端工作电流为85mA,输出ldB压缩点为5.0dBm,射频输出在2~3.5GHz频带内电压增益为6.3~9.2dB,噪声系数小于14.5dB;接收前端工作电流为50mA,输入1dB压缩点为-5.6dBm,射频输入在2~3.5GHz频带内电压增益为12—14.5dB,噪声系数小于11dB;所有端口电压驻波比均小于1.8:芯片面积1.8×2.6mm0。

关 键 词:AESA  收发前端  低噪声放大器  混频器  可变增益放大器

Design of RF Transceiver Front-End for S-Band AESA Applications
WANG Xiao-dong , DUAN Zong-ming , ZHOU Qian , WANG Zeng-qi , LI Zhi-qun.Design of RF Transceiver Front-End for S-Band AESA Applications[J].China Integrated Circuit,2013,22(8):28-35.
Authors:WANG Xiao-dong  DUAN Zong-ming  ZHOU Qian  WANG Zeng-qi  LI Zhi-qun
Affiliation:1. No. 38, Research Institute, CETC, Hefei 230088,China; 2. Southeast University, Nanjing 210096, China)
Abstract:This paper presents the design of a RF Transceiver front-end based on 0.18 μm Si RFCMOS process for S-band AESA. The system consists of transmitter and receiver front-end, including low noise amplifier, mixer, variable gain amplifier, drive amplifier and bandgap reference circuit. The post-simulation results indicate that, under 3.3V supply voltage, the current consumption of transmitter is 85mA, output P-ldB is 5.0dBm, and voltage gain is 6.3-9.2dB in the frequency band from2 to 3.5GHz, NF is less than 14.5dB. The receiver achieves input P-ldB of-5. 6dBm, voltage gain of 12-14.5dB, and NF of less than 11 dB, current consumption of 50mA. VSWR of all the port is less than 1.8. The chip area is 1.8 - 2.6mm2.
Keywords:AESA  transceiver front-end  low noise amplifier  mixer  variable gain amplifier
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