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| HgCdTe阳极硫化+ZnS钝化膜表面与界面的研究 | |
| 引用本文： | 何波,马忠权,史衍丽,徐静,赵磊,李凤,沈成,沈玲.HgCdTe阳极硫化+ZnS钝化膜表面与界面的研究[J].光电子技术,2009,29(2). |
| 作者姓名： | 何波 马忠权 史衍丽 徐静 赵磊 李凤 沈成 沈玲 |
| 作者单位： | 1. 上海大学理学院物理系,上海,200444 2. 昆明物理研究所,昆明,650223 3. 武汉理工大学,材料复合新技术国家重点实验室,武汉,430070 |
| 基金项目： | 国家自然科学基金资助项目，上海市重点学科建设项目，上海市教委创新基金，上海大学一索朗光伏材料与器件R8d)联合实验室的发展基金资助课题 |
| 摘 要： | 报道了HgCdTe阳极硫化+ZnS钝化膜表面与界面X射线光电子能谱(XPS)的研究及结果.系统地介绍了HgCdTe阳极硫化+ZnS钝化膜的制备,Br2-CH3OH与HgCdTe化学抛光的反应过程,阳极硫化的化学组成及生长机制.阐述了该钝化结构不同深度的组分分布及其对HgCdTe光伏器件电学特性的影响. |
| 关 键 词： | X射线光电子能谱 表面钝化 阳极硫化 |
A Study of Anodic Sulfide+ZnS Surface Passivation of HgCdTe |
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| He Bo,Ma Zhongquan,Shi Yanli,Xu Jing,Zhao Lei,Li Feng,Shen Cheng,Shen Ling.A Study of Anodic Sulfide+ZnS Surface Passivation of HgCdTe[J].Optoelectronic Technology,2009,29(2). | |
| Authors: | He Bo Ma Zhongquan Shi Yanli Xu Jing Zhao Lei Li Feng Shen Cheng Shen Ling |
| Affiliation: | He Bo1,Ma Zhongquan1,Shi Yanli2,Xu Jing3,Zhao Lei1,Li Feng1,Shen Cheng1,Shen Ling1(1.Department of Physics,Shanghai University,Shanghai 200444,CHN,2.Kunming Institute of Physics,Kunming 650223,3.The National Key Lab.of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,CHN) |
| Abstract: | The XPS result of anodic sulfide+ZnS Passivation is briefly reported.Preparation and basic principle of Br2-CH3OH surface treatment,chemical components of anodic sulffide layer and growing theory are presented completely.Finally,component distribute at different depth of the passivation structure and effect on PV device are described. |
| Keywords: | HgCdTe |
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