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基于端面耦合的InP基激光器/硅光波导混合集成技术研究
引用本文:王艳,王东辰,徐鹏霄,唐光华,尤国庆,孔月婵.基于端面耦合的InP基激光器/硅光波导混合集成技术研究[J].光电子技术,2020(1):13-18.
作者姓名:王艳  王东辰  徐鹏霄  唐光华  尤国庆  孔月婵
作者单位:微波毫米波单片集成和模块电路重点实验室;中国电子科技集团公司第五十五研究所
摘    要:针对硅光子集成回路缺少实用化光源的问题,提出了一种1.55μm波段InP基FP激光器芯片、InP基PIN光电探测器芯片与硅光波导芯片集成模块的设计与制备方法。使用CMOS工艺兼容的硅光无源器件制备工艺,设计并制备了倒拉锥型端面耦合器,与锥形透镜光纤耦合效率为36.7%。采用微组装对准技术将激光器芯片与硅波导芯片耦合、UV固化胶固化后耦合效率为35.8%,1 dB耦合对准容差横向为1.2μm,纵向为0.95μm。

关 键 词:InP基激光器  硅光波导  端面耦合  混合集成

Hybrid Integration of InP FP Laser/Silicon Optical Wave guide Based on Silicon Edge Coupler
WANG Yan,WANG Dongchen,XU Pengxiao,TANG Guanghua,YOU Guoqing,KONG Yuechan.Hybrid Integration of InP FP Laser/Silicon Optical Wave guide Based on Silicon Edge Coupler[J].Optoelectronic Technology,2020(1):13-18.
Authors:WANG Yan  WANG Dongchen  XU Pengxiao  TANG Guanghua  YOU Guoqing  KONG Yuechan
Affiliation:(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing 210016,CHN;The 55th Research Institute of China Electronic Technology Group Corporation,Nanjing 210016,CHN)
Abstract:To solve the problem of practical light source lacking in silicon photonic integrated cir cuit,design and preparation method of integrated module including 1.55μm InP FP laser chip,InP PIN photodetector chip and silicon optical waveguide was proposed.Silicon edge coupler of inverted cone type was fabricated by CMOS compatible process,and the coupling efficiency was 36.7%.The laser chip and silicon waveguide chip were coupled by micro-assembly alignment technology,and the coupling efficiency was 35.8%after UV adhesive curing.The 1 dB alignment tolerance was 1.2μm horizontally and 0.95μm longitudinally.
Keywords:InP-based laser  silicon-based optical waveguide  edge coupler  hybrid integration
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