| Al栅a—Si TFT栅绝缘膜研究 |
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| 引用本文： | 熊绍珍,谷纯芝.Al栅a—Si TFT栅绝缘膜研究[J].光电子技术,1995,15(2):116-121. |
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| 作者姓名： | 熊绍珍 谷纯芝 |
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| 作者单位： | 南开大学!天津300071 |
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| 摘 要： | Ａｌ栅可明显降低ＡＭ－ＬＣＤ中ａ－Ｓｉ ＴＦＴ矩阵的栅总线电阻及栅脉冲信号延迟，有利于提高高密显示屏的开口率与图像质量。本文详细分析了Ａｌ栅的阳极氧化技术，获得了适于ａ－Ｓｉ ＴＦＴ复合栅的Ａｌ２Ｏ３栅绝缘材料。
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| 关 键 词： | Al栅 非晶硅 薄膜晶体管 阳极氧化 栅绝缘膜 |
Gate Insulator of Al Gate a-Si TFT |
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| Xiong Shaozhen, Gu Chunzhi, Li Junfeng, Zhou Zhenhua,Meng Zhiguo, Dai Yongping, Zhang Jianjun, Ding Shibin, Zhao Ying.Gate Insulator of Al Gate a-Si TFT[J].Optoelectronic Technology,1995,15(2):116-121. |
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| Authors: | Xiong Shaozhen Gu Chunzhi Li Junfeng Zhou Zhenhua Meng Zhiguo Dai Yongping Zhang Jianjun Ding Shibin Zhao Ying |
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| Abstract: | Al gate can obviously reduce total gate-line resistance and gate-pulse delay of a-Si TFT matrix used in AM-LCD. It is profitable for increasing the aperture ratio and image quality of high-information-content display screen. The anodized technology of Al gate is discussed in detail. A high quality gate insulator Al2O3 with good electric characteristics has been obtained,which is satisfied for the double-gate insulator a-Si TFT. |
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| Keywords: | Al gate a-Si TFT anodizing Al_2O_3 gate insulator |
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