| InP/InGaAs HBT的频率特性分析 |
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| 引用本文： | 马晓晖,黄永清,黄辉,吴强,任晓敏.InP/InGaAs HBT的频率特性分析[J].光电子技术,2008,28(3). |
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| 作者姓名： | 马晓晖 黄永清 黄辉 吴强 任晓敏 |
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| 作者单位： | 北京邮电大学,光通信与光波技术教育部重点实验室,北京,100876 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金，高等学校学科创新引智计划，教育部跨世纪优秀人才培养计划 |
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| 摘 要： | 频率特性是异质结双极型晶体管(HBT)设计中应首先考虑的因素,而fT,fmax则是HBT最主要的频率性能指标.首先基于InP/InGaAs HBT器件的物理结构构建了小信号等效电路模型,对该模型进行了理论分析,随后基于提取的有效参数结果,对该等效电路模型的频率特性进行了详细的计算和仿真,分析了影响fT,fmax的一些主要因素,得出的结论对于InP/InGaAs HBT的设计制作和性能优化具有一定的指导作用.
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| 关 键 词： | 异质结双极型晶体管 小信号电路模型 截止频率 功率增益 |
Frequency Performance Analysis of InP/InGaAs HBT |
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| MA Xiao-hui,HUANG Yong-qing,HUANG Hui,WU Qiang,REN Xiao-min.Frequency Performance Analysis of InP/InGaAs HBT[J].Optoelectronic Technology,2008,28(3). |
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| Authors: | MA Xiao-hui HUANG Yong-qing HUANG Hui WU Qiang REN Xiao-min |
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| Affiliation: | MA Xiao-hui,HUANG Yong-qing,HUANG Hui,WU Qiang,REN Xiao-min(Key Laboratory of Optical Communication , Lightwave Technologies,Ministry of Education,Beijing University of Posts , Telecommunications,Beijing 100876,CHN) |
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| Abstract: | Frequency performance is the first key factor in the design of heterojunction bipolar transistor(HBT),fTand fmax are the main frequency parameters.In this paper,InP/InGaAs HBT small-signal equivalent circuit model was introduced based on its structure at the beginning.Next,the circuit model had been analyzed theoretically.Then based on the exact parameter extraction result,the circuit model had been performed calculated and simulated.Some main factors which affect fT,fmax was analyzed,the conclusion shows t... |
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| Keywords: | HBT small-signal circuit model cut-off frequency power gain |
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