| InP基RTD太赫兹振荡源及其应用研究进展 |
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| 引用本文： | 石向阳,苏 娟,谭 为,张 健.InP基RTD太赫兹振荡源及其应用研究进展[J].太赫兹科学与电子信息学报,2018,16(1):1-6. |
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| 作者姓名： | 石向阳 苏 娟 谭 为 张 健 |
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| 作者单位： | a.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;b.Microsystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China,a.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;b.Microsystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China,a.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;b.Microsystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China and a.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;b.Microsystem & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China |
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| 摘 要： | 紧凑和相干的太赫兹源是太赫兹应用的关键组成，共振隧穿二极管(RTD)是目前振荡频率最高的电子学器件，RTD太赫兹振荡源具有结构紧凑、功耗低、室温工作、有一定输出功率、易集成、覆盖频率较宽等优点。InP基RTD太赫兹振荡源在600 GHz左右的频段内输出功率可达百微瓦量级，可见报道的最高振荡频率为1.92 THz，输出功率0.4 μW。RTD振荡源的输出功率可以通过偏置电压进行直接调制，使得其在高容量短距离的太赫兹通信系统中具有很大的优势。目前，InP基RTD太赫兹振荡源成为太赫兹源领域的研究热点。
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| 关 键 词： | 共振隧穿二极管 太赫兹源 振荡器 太赫兹通信 |
| 收稿时间： | 2016/11/24 0:00:00 |
| 修稿时间： | 2017/3/15 0:00:00 |
Research progress of InP-based resonant tunneling diode terahertz oscillator and its various applications |
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| SHI Xiangyang,SU Juan,TAN Wei and ZHANG Jian.Research progress of InP-based resonant tunneling diode terahertz oscillator and its various applications[J].Journal of Terahertz Science and Electronic Information Technology,2018,16(1):1-6. |
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| Authors: | SHI Xiangyang SU Juan TAN Wei and ZHANG Jian |
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