| ZnS对HgCdTe器件的表面覆盖及其输运特性的影响 |
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| 引用本文： | 周咏东,方家熊,汤定元.ZnS对HgCdTe器件的表面覆盖及其输运特性的影响[J].红外技术,2000,22(3):31-34. |
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| 作者姓名： | 周咏东 方家熊 汤定元 |
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| 作者单位： | 1. 苏州大学,物理科学与技术学院,江苏,苏州,215006
2. 中国科学院上海技术物理研究所,上海,200083 |
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| 摘 要： | 利用成熟的ＨｇＣｄＴｅ器件生产工艺制备了ＨｇＣｄＴｅＨａｌｌ器件，利用Ａｒ束溅射沉积技术在ＨｇＣｄＴｅＨａｌｌ器件表面实现了ＺｎＳ介质薄膜的代温生长；用低浊变磁场Ｈｌｌ测量技术对ＺｎＳ薄膜覆盖前后的Ｈａｌｌ器件输运特性进行了研究，分析了ＺｎＳ薄膜的沉积生长对器件中ＨｇＣｄＴｅ晶体表面、体内载流子的分布、迁移率的影响。实验证明，利用文中的Ａｒ＾＋束溅射沉积技术在ＨｇＣｄＴｅ器件表面进行ＺｎＳ介质膜生
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| 关 键 词： | HgCdTe 红外探测器 硫化锌 表面覆盖 |
| 文章编号： | 1001-8891(2000)03-0031-04 |
| 修稿时间： | 1999-07-26 |
The Study of the Influence of Surface Coating of ZnS on the HgCdTe Device |
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| ZHOU Yong-dong,FANG Jia-xiong,TANG Ding-yuan.The Study of the Influence of Surface Coating of ZnS on the HgCdTe Device[J].Infrared Technology,2000,22(3):31-34. |
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| Authors: | ZHOU Yong-dong FANG Jia-xiong TANG Ding-yuan |
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| Affiliation: | ZHOU Yong-dong
(Department of Science and Technology, Soochow University, Suzhou 215006, China)FANG Jia-xiong
,TANG Ding-yuan
(Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China) |
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| Abstract: | HgCdTe Hall device is made in standard device fabrication process. ZnS film is deposited in low temperature on the surface of the HgCdTe Hall Device using Ar+ beam sputtering technology. The influence of the coating of ZnS film on the HgCdTe Hall device on the carriers in HgCdTe crystal is studied through magnetic field-dependent transfer measurement. It is proved that the ZnS film deposited in this way on the surface of HgCdTe device will not undermine the HgCdTe crystal, and the fixed charge of the interface (ZnS/device surface) will not degrade the property of n-HgCdTe photoconductor detector. |
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| Keywords: | ZnS Ar+beam sputtering deposition mobility spectrum HgCdTe infrared detector |
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