射频磁控溅射氧化钒薄膜的结构与性能研究(英文)

以非制冷微测辐射热计型红外探测器应用为需求背景,采用射频磁控溅射技术在300℃低温条件下制备了氧化钒薄膜。采用X射线衍射(XRD)、原子力显微镜(AFM)、能量色散谱(EDS)及X射线光电子能谱(XPS)技术表征了薄膜的结晶状态、微观结构与化学组成。采用四探针技术研究了薄膜的电学性能。结果表明该薄膜主要为非晶态的二氧化钒(VO2),并具有光滑的表面形貌。这种非晶VO2薄膜在22～100℃温度范围内不存在半导体-金属相变。100 nm厚的非晶VO2薄膜室温下的面电阻为600 kΩ/□,同时表现出-2.1%/℃的较高电阻温度系数(TCR),这表明该薄膜有希望用于非制冷微测辐射热计型红外探测器。

Structure and Property Study on Vanadium Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering Technique

Aimed at uncooled microbolometer infrared detector applications, vanadium oxide thin films were fabricated successfully by the radio frequency magnetron sputtering technique at low temperature of 300℃. The crystalline, microstructure and composition of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive spectra (EDS) and X-ray photoelectron spectroscopy (XPS). The electric properties of the film were investigated using four-point probe technique. The results show that the film is VO2 phase and exhibits amorphous structure with smooth surface morphology. Semi-conductor-to-metal phase transition was not observed for such an amorphous VO2 thin film in the temperature range of 22-100℃. Moreover, excellent performances such as temperature coefficient of resistance (TCR) of -2.1%/℃ at room temperature and sheet resistance of 600 kΩ/square was obtained in the VO2 thin film with suitable thickness (100 nm), suggesting a potential application in uncooled microbolometer infrared detectors.