| 离子束刻蚀碲镉汞中转型宽度 |
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| 引用本文： | 徐国庆,刘向阳,王仍,储开慧,汤亦聃,乔辉,贾嘉,李向阳.离子束刻蚀碲镉汞中转型宽度[J].红外与毫米波学报,2014,33(5):477-481. |
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| 作者姓名： | 徐国庆 刘向阳 王仍 储开慧 汤亦聃 乔辉 贾嘉 李向阳 |
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| 作者单位： | 1. 中国科学院上海技术物理研究所传感技术联合国家重点实验室,上海200083;中国科学院研究生院,北京100049
2. 中国科学院上海技术物理研究所传感技术联合国家重点实验室,上海,200083 |
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| 基金项目： | 国家自然科学基金，National Natural Science Foundation of China |
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| 摘 要： | 用Ar+离子束在p型HgCdTe(碲镉汞)上刻蚀出不同体积的环孔,利用激光诱导电流方法测试转型后的n区宽度.研究发现,在相同的刻蚀条件下,n区宽度取决于材料的汞空位浓度和被刻蚀HgCdTe体积.当被刻蚀HgCdTe体积相同时,n区宽度随汞空位浓度的增加呈线性减小;当汞空位浓度一定时,n区宽度随被刻蚀HgCdTe体积的增加呈线性增加.
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| 关 键 词： | 激光诱导电流 p型HgCdTe Ar+离子束刻蚀 转型宽度 |
| 收稿时间： | 2013/5/27 0:00:00 |
| 修稿时间： | 2013/6/24 0:00:00 |
Conductivity type conversion in ion-beam-milled HgCdTe |
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| XU Guo-Qing,LIU Xiang-Yang,WANG Reng,CHU Kai-Hui,TANG Yi-Dan,QIAO Hui,JIA Jia and LI Xiang-Yang.Conductivity type conversion in ion-beam-milled HgCdTe[J].Journal of Infrared and Millimeter Waves,2014,33(5):477-481. |
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| Authors: | XU Guo-Qing LIU Xiang-Yang WANG Reng CHU Kai-Hui TANG Yi-Dan QIAO Hui JIA Jia and LI Xiang-Yang |
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| Affiliation: | State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science and State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science |
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| Abstract: | After different loopholes are produced by Ar+ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if volume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged. |
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| Keywords: | laser beam induced current p-HgCdTe Ar ion-beam milling |
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