| 一种f_t为176GHz、大电流多指结构的InGaAs/InP异质结双极晶体管 |
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| 引用本文： | 金智,程伟,刘新宇,徐安怀,齐鸣.一种f_t为176GHz、大电流多指结构的InGaAs/InP异质结双极晶体管[J].红外与毫米波学报,2009,28(2):81-84. |
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| 作者姓名： | 金智 程伟 刘新宇 徐安怀 齐鸣 |
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| 作者单位： | 1. 中国科学院微电子研究所微波器件与集成电路研究室,北京,100029
2. 中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 基金项目： | 国家重点基础研究发展规划(973计划) |
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| 摘 要： | 针对毫米波电路对大电流、高截止频率器件的要求,利用平坦化技术,设计并制作成功了结构紧凑的四指合成InGaAs/InP异质结双极晶体管.实验结果表明发射极的宽度可减小到1μm.Kirk电流可达到110wA,电流增益截止频率达到176GI-Iz.这种器件有望在中等功率的毫米波电路中有所应用.
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| 关 键 词： | 异质结双极晶体管 高电流 高频 |
| 收稿时间： | 2008/3/14 |
HIGH CURRENT,MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f_t OF 176GHz |
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| JIN Zhi,CHENG Wei,LIU Xin-Yu,XU An-Huai,QI Ming.HIGH CURRENT,MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f_t OF 176GHz[J].Journal of Infrared and Millimeter Waves,2009,28(2):81-84. |
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| Authors: | JIN Zhi CHENG Wei LIU Xin-Yu XU An-Huai QI Ming |
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| Affiliation: | 1.Microwave Device and IC Department;Institute of Microelectronics;Chinese Academy of Sciences;Beijing 100029;China;2.Shanghai Institute of Microsystem and Information Technology;Shanghai 200050;China |
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| Abstract: | To meet the requirements of millimeter wave circuits for high-current and high cutoff-frequency devices, a compact 4-finger InGaAs/InP single heterostructure bipolar transistor(HBT) was designed and fabricated successfully by using planarization technology. The results show that the width of the emitter fingers is as small as 1μm, the high Kirk current of 4-finger HBT reaches 110mA, and the current gain cutoff frequency is as high as 176GHz. The device is promising on the applications in the medium-power circuits operating at millimeter-wave range. |
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| Keywords: | InP InP heterostructure bipolar transistor high current high frequency CLC number:TN385 Document:A |
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