| 330GHz砷化镓单片集成分谐波混频器 |
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| 引用本文： | 刘戈,张波,张立森,王俊龙,邢东,樊勇.330GHz砷化镓单片集成分谐波混频器[J].红外与毫米波学报,2017,36(2):252-256. |
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| 作者姓名： | 刘戈 张波 张立森 王俊龙 邢东 樊勇 |
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| 作者单位： | 电子科技大学 电子工程学院,电子科技大学 电子工程学院,中国电子科技集团第十三研究所,中国电子科技集团第十三研究所,中国电子科技集团第十三研究所,电子科技大学 电子工程学院 |
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| 基金项目： | 国家自然基金(No.61301051)；中央高校基本业务费(No.ZYGX2015J017)；国家国际合作专项(No.2014DFA11110) |
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| 摘 要： | 在太赫兹频段,二极管尺寸与波长相比已不能忽略,二极管的封装会引入很大的寄生参量,因此需建立二极管三维模型提取寄生参数.同时人工装配难度增大,会增加电路不确定性.采用12μm砷化镓单片集成悬置微带线结构,基于电子科技大学与中国电子科技集团第十三研究所自主联合设计的肖特基二极管研制330 GHz砷化镓单片集成分谐波混频器.实测结果显示在5 mW本振功率的驱动下,在328 GHz可得到最小变频损耗10.4 dB,在320~340 GHz范围内,单边带变频损耗小于14.7 dB.
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| 关 键 词： | 太赫兹 单片集成分谐波混频器 肖特基二极管 砷化镓 变频损耗 |
| 收稿时间： | 2016/9/19 0:00:00 |
| 修稿时间： | 2016/11/11 0:00:00 |
330GHz GaAs monolithic integrated sub-harmonic mixer |
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| LIU Ge,Zhang Bo,Zhang Li-sen,Wang Jun-long,Xing Dong and Fan Yong.330GHz GaAs monolithic integrated sub-harmonic mixer[J].Journal of Infrared and Millimeter Waves,2017,36(2):252-256. |
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| Authors: | LIU Ge Zhang Bo Zhang Li-sen Wang Jun-long Xing Dong and Fan Yong |
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| Affiliation: | School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu,School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu,National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute,School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu |
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| Abstract: | In the terahertz band, diode size can no longer be ignored compared with the wavelength, significant parasitic parameters will be introduced due to diode package, so it is very necessary to establish three-dimensional model to extract parasitic parameters. Meanwhile manual assembly becomes more difficult, circuit uncertainty will increase. A 330GHz GaAs monolithic integrated sub-harmonic mixer based on planar schottky barrier diode designed by China Electronics Technology Group Corporation-13(CETC-13) and University of Electronic Science and Technology of China(UESTC) fabricated on 12um thick suspended GaAs substrate was presented. Test results show that the minimum conversion loss is 10.4dB at 328GHz, SSB conversion loss was less than 14.7dB from 320GHz to 340GHz when the LO power is 5mW. |
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| Keywords: | terahertz monolithic integrated sub-harmonic mixer schottky diode GaAs conversion loss |
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