| 基于VO2薄膜非致冷红外探测器性能研究 |
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| 引用本文： | 陈长虹,易新建,张静 熊笔峰.基于VO2薄膜非致冷红外探测器性能研究[J].红外与毫米波学报,2001,20(2):136-138. |
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| 作者姓名： | 陈长虹 易新建 张静 熊笔峰 |
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| 作者单位： | 华中科技大学光电工程系, |
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| 基金项目： | 国家高技术863基金资助项目 |
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| 摘 要： | 用微电子工艺制备了VO
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| 关 键 词： | 测辐射热探测器 探测率 黑体响应率 噪声电压 VO2薄膜非致冷红外探测器 微电子工艺 |
| 修稿时间： | 2000年6月6日 |
CHARACTERIZATION OF
UNCOOLED VO2-BASED THIN FILMS BOLOMETER |
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| CHEN Chang-Hong.CHARACTERIZATION OF
UNCOOLED VO2-BASED THIN FILMS BOLOMETER[J].Journal of Infrared and Millimeter Waves,2001,20(2):136-138. |
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| Authors: | CHEN Chang-Hong |
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| Abstract: | An uncooled bolometer based on VO2 thin films deposited by reactive ion-beam sputtering was fabricated. The noise and responsivity for the spectral range 8-12μm were measured at 296K. At the chopper frequency of 30Hz, the device having a detectivity D* of 1.89×108cmHz1/2W-1and a thermal time constant of 0.011s was realized. |
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| Keywords: | bolometer infrared vanadium dioxide detectivity responsivity |
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