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碲镉汞p^+-on-n长波异质结探测器的研究
引用本文:叶振华,吴俊,胡晓宁,巫艳,王建新,李言谨,何力.碲镉汞p^+-on-n长波异质结探测器的研究[J].红外与毫米波学报,2004,23(6):423-426.
作者姓名:叶振华  吴俊  胡晓宁  巫艳  王建新  李言谨  何力
作者单位:中国科学院上海技术物理研究所,材料器件中心,上海,200083
基金项目:中国科学院知识创新工程资助项目(KGCX2-SWJG-06)
摘    要:报道了HgCdTe p^ -on-o长波异质结焦平面器件的研究结果.采用由分子柬外延(MBE)和原位掺杂技术生长的P^ -on-n异质结材料,通过湿法腐蚀、台面钝化、台面金属化、铟柱制备和互连等工艺,得到了HgCdTe p^ -on-o长波异质结焦平面器件.根据,I-V实验结果和暗电流理论,拟合计算和分析了各种暗电流机制对器件性能的影响.且获得了器件的响应光谱和探测率。

关 键 词:异质结  焦平面器件  碲镉汞  MBE  暗电流  器件性能  湿法腐蚀  长波  结焦  工艺
文章编号:1001-9014(2004)06-0423-04
收稿时间:2003/6/16
修稿时间:2003年6月16日

STUDY OF HgCdTe p+-on-n LONG-WAVELENGTH HETERO-JUNCTION DETECTOR
YE Zhen Hu,WU Jun,HU Xiao Ning,WU Yan,WANG Jian Xin,LI Yan Jin,HE Li.STUDY OF HgCdTe p+-on-n LONG-WAVELENGTH HETERO-JUNCTION DETECTOR[J].Journal of Infrared and Millimeter Waves,2004,23(6):423-426.
Authors:YE Zhen Hu  WU Jun  HU Xiao Ning  WU Yan  WANG Jian Xin  LI Yan Jin  HE Li
Abstract:The results of the HgCdTe p + on n long wavelength hetero junction infrared focal plane arrays were presented. HgCdTe p + on n hetero junction material was grown by molecular beam epitaxy(MBE) and in situ doping, and HgCdTe p + on n hetero junction infrared focal plane arrays were fabricated by the process of wet etching, side wall passivation, side wall matelization, indium bump fabrication and hybridization etc. According to the I V experiments and the dark current mechanism, the effect of all kinds of dark current was calculated and analyzed. The spectral response and detectivity of the device were also measured.
Keywords:HgCdTe  p~+-on-n  hetero-junction  R_0A
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