首页 | 本学科首页   官方微博 | 高级检索  
     

基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器
引用本文:朱耀明,李永富,李雪,唐恒敬,邵秀梅,陈郁,邓洪海,魏鹏,张永刚,龚海梅.基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器[J].红外与毫米波学报,2012,31(1):11-14.
作者姓名:朱耀明  李永富  李雪  唐恒敬  邵秀梅  陈郁  邓洪海  魏鹏  张永刚  龚海梅
作者单位:中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海微系统与信息技术研究所,中国科学院上海技术物理研究所
基金项目:国家自然科学基金重点项目(No.50632060),中国科学院知识创新工程青年人才领域前沿前瞻项目资助(Q-ZY-9)、(C2-32)
摘    要:在N-on-P型In0.78Al0.22As/In0.78Ga0.22As外延材料上,采用感应耦合等离子体(ICP)刻蚀技术制备了背照射640×1线列InGaAs探测器芯片,研究了探测器光电性能.结果表明,室温下单元器件响应截止波长和峰值波长分别为2.36μm和1.92μm,平均优值因子(R0A)为16.0Ω.cm2,峰值量子效率达到了37.5%;在1 ms积分时间下焦平面探测器平均峰值探测率达到了2.01×1011 cmHz1/2/W,响应非均匀性为8.77%,盲元率约为0.6%.

关 键 词:ICP刻蚀  N-on-P结构  线列探测器  光电性能
收稿时间:2010/12/5
修稿时间:2011/1/10 0:00:00

Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination
ZHU Yao-Ming,LI Yong-Fu,LI Xue,TANG Heng-Jing,SHAO Xiu-Mei,CHEN Yu,DENG Hong-Hai,WEI Peng,ZHANG Yong-Gang and GONG Hai-Mei.Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination[J].Journal of Infrared and Millimeter Waves,2012,31(1):11-14.
Authors:ZHU Yao-Ming  LI Yong-Fu  LI Xue  TANG Heng-Jing  SHAO Xiu-Mei  CHEN Yu  DENG Hong-Hai  WEI Peng  ZHANG Yong-Gang and GONG Hai-Mei
Affiliation:shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences,shanghai institute of technical physics of the Chinese academy of science
Abstract:Back-illuminated 640×1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investigated. The results indicated that the cutoff-wavelength and peak-wavelength are 2.36 μm and 1.92 μm, respectively, at room temperature. The average value of R0A is 16.0 Ω·cm2 and the quantum efficiency of the peak wavelength reaches to 37.5%. Otherwise, the average peak detectivity of linear detector array reaches to 2.01×1011 cmHz1/2/W, the response nonuniformity is about 8.77% and the defective pixel ratio is 0.6% for 1 ms of integrate time.
Keywords:ICP etching  N-on-P configuration  linear detector array  photoelectric characteristics
本文献已被 CNKI 等数据库收录!
点击此处可从《红外与毫米波学报》浏览原始摘要信息
点击此处可从《红外与毫米波学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号