| 利用同步测量研究二氧化钒薄膜的电学与光学相变特性 |
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| 引用本文： | 杨 伟,梁继然,姬 扬,刘 剑.利用同步测量研究二氧化钒薄膜的电学与光学相变特性[J].红外与毫米波学报,2014,33(4):426-429. |
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| 作者姓名： | 杨 伟 梁继然 姬 扬 刘 剑 |
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| 作者单位： | 1. 中国科学院半导体研究所,北京,100083
2. 中国科学院半导体研究所,北京100083;天津大学电子信息工程学院,天津300072 |
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| 基金项目： | 量子调控专项(2009CB929301)、自然科学(91021022) |
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| 摘 要： | 利用射频磁控溅射方法在蓝宝石衬底上制备了氧化钒薄膜,X射线衍射的测量结果表明薄膜的主要成分是多晶二氧化钒.实现了二氧化钒薄膜半导体-金属相变过程的电阻和五个不同波长下薄膜反射率的同步测量.实验结果表明,电学和光学测量都在相变过程中出现回滞曲线,但是二者的表现形式有明显差别.当用光学方法探测时,同一次相变过程中不同区域的反射率曲线几乎完全重合,证明了薄膜样品的均匀性.
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| 关 键 词： | 二氧化钒薄膜 电学方法 光学方法 同步测量 反射率 |
| 收稿时间： | 2013/2/25 |
| 修稿时间： | 2014/5/18 0:00:00 |
Electrical and optical properties of vanadium dioxide thin film at phase transition |
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| YANG Wei,LIANG Ji-Ran,JI Yang and LIU Jian.Electrical and optical properties of vanadium dioxide thin film at phase transition[J].Journal of Infrared and Millimeter Waves,2014,33(4):426-429. |
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| Authors: | YANG Wei LIANG Ji-Ran JI Yang and LIU Jian |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,School of electronic and Information Engineering, Tianjin University,Institute of Semiconductors,Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences |
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| Abstract: | Vanadium oxide thin film was deposited on sapphire by RF magnetron sputtering. The XRD measurement result shows that the thin film is mainly composed of polycrystalline vanadium dioxide. The resistance of the thin film and its optical reflectivity at five different wavelengths were measured simultaneously during the semiconductor-metal phase transition. While both resistance and reflectivity measurements show reproducible hysteresis loops, they have quite different appearance. The optical phase transitions of VO2 at different points are almost the same, thus proving that the sample is uniform. |
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| Keywords: | vanadium oxide film electrical method optical method simultaneous measurement reflectivity |
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