| （英）弛豫铁电0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3薄膜的微结构和光学性能 |
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| 引用本文： | 田玥,唐艳学,周丹,胡志娟,王飞飞,陈心满,刘锋,王涛,谢东珠,孙大志,石旺舟,胡古今,孔伟金.（英）弛豫铁电0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3薄膜的微结构和光学性能[J].红外与毫米波学报,2012,31(4):289-293. |
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| 作者姓名： | 田玥 唐艳学 周丹 胡志娟 王飞飞 陈心满 刘锋 王涛 谢东珠 孙大志 石旺舟 胡古今 孔伟金 |
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| 作者单位： | 上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,上海师范大学 光电材料与器件重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室,青岛大学 物理科学学院 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | 采用磁控溅射法,选用LaNi O3作为缓冲层,在硅基片上制备出了0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3弛豫铁电薄膜.研究了沉积温度对薄膜的微结构和光学性能的影响.其中,沉积温度为500oC时制备的薄膜,不仅具有纯的钙钛矿结构,高度(110)择优取向、致密、无裂纹的形貌、而且具有最大的剩余极化,大小为17.2μC/cm2.使用柯西模型进行拟合反射谱,分析得到薄膜的折射率和消光系数.在波长为633 nm时,500oC沉积的薄膜的折射率大小为2.41.另外,薄膜的光学带隙在2.97～3.22 eV范围内.并初步讨论了这些薄膜的光学性能的差异.
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| 关 键 词： | PMN-0.26PT铁电薄膜 折射率 消光系数 |
| 收稿时间： | 4/30/2011 1:13:45 PM |
| 修稿时间： | 2012/3/10 0:00:00 |
Microstructures and optical properties of relaxor ferroelectric 0.74Pb (Mg1/3Nb2/3)O3-0.26PbTiO3 thin films |
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| TIAN Yue,TANG Yan-Xue,ZHOU Dan,HU Zhi-Juan,WANG Fei-Fei,CHEN Xin-Man,LIU Feng,WANG Tao,XIE Dong-Zhu,SUN Da-Zhi,SHI Wang-Zhou,HU Gu-Jin and KONG Wei- Jin.Microstructures and optical properties of relaxor ferroelectric 0.74Pb (Mg1/3Nb2/3)O3-0.26PbTiO3 thin films[J].Journal of Infrared and Millimeter Waves,2012,31(4):289-293. |
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| Authors: | TIAN Yue TANG Yan-Xue ZHOU Dan HU Zhi-Juan WANG Fei-Fei CHEN Xin-Man LIU Feng WANG Tao XIE Dong-Zhu SUN Da-Zhi SHI Wang-Zhou HU Gu-Jin and KONG Wei- Jin |
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| Affiliation: | Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device,Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences and College of Physics Science, Qingdao University |
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| Abstract: | Relaxor ferroelectric 0.74Pb (Mg1/3 Nb2/3) O3-0.26PbTiO3 thin films were prepared on LaNiO3-buffered silicon substrates by radio-frequency magnetron sputtering. The effect of deposition temperature on films' microstructures and optical properties was investigated. The sample deposited at 500 oC exhibits not only a pure perovskite phase, highly (110)-preferred orientation, and dense and crack-free morphology, but also the largest average remnant polarization of 17.2 μC/cm2 among all investigated films. With Cauchy model the refractive indices and extinction coefficients for these specimens have been obtained by fitting experimental reflectance spectra. At a wavelength of 633 nm, the value of refractive index 2.41 was obtained for the thin films deposited at 500 oC. In addition, optical band gaps of the films are in the range of 2.97-3.22 eV. A preliminary discussion has been carried out on the difference in the optical properties of these films. |
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| Keywords: | PMN-0 26PT ferroelectric thin films refractive indices extinction coefficients |
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