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分子束外延Ga_(1-x)In_xAs_(1-y)Sb_y材料的傅里叶变换红外光谱
引用本文:毕文刚,李爱珍,郑燕兰,王建新,李存才.分子束外延Ga_(1-x)In_xAs_(1-y)Sb_y材料的傅里叶变换红外光谱[J].红外与毫米波学报,1992,11(5).
作者姓名:毕文刚  李爱珍  郑燕兰  王建新  李存才
作者单位:中国科学院上海冶金研究所,中国科学院上海冶金研究所,中国科学院上海冶金研究所,中国科学院上海冶金研究所,中国科学院上海冶金研究所 上海,200050,上海,200050,上海,200050,上海,200050,上海,200050
摘    要:报道了(100)半绝缘GaAs衬底和(100)掺Te GaSb衬底上分子束外延法生长的Ga_(1-x)In_xAs_(1-y)Sb_y材料的傅里叶变换红外光谱特性,分析解释了引起两种衬底上Ga_(1-x)In_xAs_(1-y)Sb_y外延材料红外光谱差异的原因.实验确定了这种材料的带隙和相应波长,与内插法计算的结果进行了比较,发现所有样品的实验值均偏大于理论值,对此进行了理论探讨.

关 键 词:傅里叶变换红外光谱  分子束外延  Ga_(1-x)In_xAs_(1-y)Sb_y外延膜

FOURIER TRANSFORM INFRARED SPECTROSCOPY CHARACTERIZATION OF MBE-GROWN Ga_(1-x)In_xAs_(1-y)Sb_y
Bi Wengang,Li Aizhen,Zheng Yanlan,Wang Jianxin.FOURIER TRANSFORM INFRARED SPECTROSCOPY CHARACTERIZATION OF MBE-GROWN Ga_(1-x)In_xAs_(1-y)Sb_y[J].Journal of Infrared and Millimeter Waves,1992,11(5).
Authors:Bi Wengang  Li Aizhen  Zheng Yanlan  Wang Jianxin
Abstract:Characterization of room temperature Fourier transform infrared spectro- scopy for MBE-grown Ga_(1-x)In_xAs_(1-y)Sb_y on (100) semi-insulating GaAs and (100) Te-doped GaSb substrates has been studied and the causes for the difference between the resulting spectrum of GaInAsSb/GaAs and that of GaInAsSb/GaSb have been successfully interpreted. The band gap energies of GaInAsSb have been determined ex- perimentally and compared with those obtained by an interpolation method. It is found that for all samples investigated, the experimental data are slightly larger than the theo- retical ones, of which the origin is discussed in detail in this paper.
Keywords:FTIR  MBE  GaInAsSb epitaxial film  
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