| PC型HgCdTe探测器的记忆效应 |
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| 引用本文： | 陆启生 蒋志平. PC型HgCdTe探测器的记忆效应[J]. 红外与毫米波学报, 1998, 17(4): 317-320 |
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| 作者姓名： | 陆启生 蒋志平 |
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| 作者单位： | 国防科技大学应用物理系,湖南,长沙,410073 |
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| 摘 要： | 通过测量ＰＣ型ＨｇＣｄＴｅ探测器的动态响应，发现在工作温度（７７Ｋ）下，激光辐照后，探测器的电导率产生改变（记忆），电阻变化率提高，这种现象在工作温度下能长期保持。当升温（至室温）后，记忆功能消失。本文对这种现象进行了多方面的实验研究和机理的分析。
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| 关 键 词： | 记忆效应 动态响应 汞镉碲探测器 红外探测 |
| 修稿时间： | 1997-01-15 |
THE MEMORY EFFECT OF PC TYPE HgCdTe DETECTORS |
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| LU Qi Sheng JIANG Zhi Ping LIU Ze Jin SHU Bo Hong. THE MEMORY EFFECT OF PC TYPE HgCdTe DETECTORS[J]. Journal of Infrared and Millimeter Waves, 1998, 17(4): 317-320 |
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| Authors: | LU Qi Sheng JIANG Zhi Ping LIU Ze Jin SHU Bo Hong |
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| Abstract: | By measuring the dynamic response in PC type HgCdTe detectors, it was found that at the operating temperature (77K), after laser irradiation, the conductivity of detectors changes (showing memory), and responsibility is raised up. This effect will remain unchanged for a long term at the operating temperature. When the temperature is raised to room temperature, the memory function disappears. Various measurement results were given on this effect and its mechanism was analyzed in this paper. |
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| Keywords: | PC type HgCdTe detector memory effect dynamic response annealing. |
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