| 厚度与带隙可调、原子层沉积的超薄五氧化二钒纳米晶薄膜 |
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| 引用本文： | 张天宁,王书霞,黄田田,魏威,陈鑫,戴宁.厚度与带隙可调、原子层沉积的超薄五氧化二钒纳米晶薄膜[J].红外与毫米波学报,2019,38(1):3-7. |
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| 作者姓名： | 张天宁 王书霞 黄田田 魏威 陈鑫 戴宁 |
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| 作者单位： | 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083;中国科学院大学,北京 100049;中国科学院上海技术物理研究所 红外物理国家重点实验室,上海,200083 |
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| 摘 要： | 利用原子层沉积方法制备V_2O_5纳米片晶薄膜.薄膜厚度可以被精确控制,并对纳米晶V_2O_5薄膜的结构形貌、光学带隙和拉曼振动有显著影响.原子层沉积过程中V_2O_5薄膜生长的两个阶段导致薄膜具有两个光学带隙,这将有助于理解超薄薄膜生长与功能应用.
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| 关 键 词： | 原子层沉积 五氧化二钒 薄膜 |
| 收稿时间： | 2018/3/18 0:00:00 |
| 修稿时间： | 2018/4/9 0:00:00 |
Atomic-Layer-Deposited ultrathin films of vanadium pentoxide crystalline nanoflakes with controllable thickness and optical band-gap |
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| ZHANG Tian-Ning,WANG Shu-Xi,HUANG Tian-Tian,WEI Wei,CHEN Xin and DAI Ning.Atomic-Layer-Deposited ultrathin films of vanadium pentoxide crystalline nanoflakes with controllable thickness and optical band-gap[J].Journal of Infrared and Millimeter Waves,2019,38(1):3-7. |
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| Authors: | ZHANG Tian-Ning WANG Shu-Xi HUANG Tian-Tian WEI Wei CHEN Xin and DAI Ning |
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| Affiliation: | Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai Institute of Technical Physics, Chinese Academy of Sciences |
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| Abstract: | Thin films of crystalline V2O5 nanoflakes were prepared through atomic layer deposition (ALD) process. The film thickness was verified to play a critical role in determining structural morphology, optical bandgap and Raman vibration of crystalline V2O5 thin films. Two optical bandgaps observed at about 2.8 eV and 2.4 eV result from two growth stages during ALD preparation. We expect that these results help to understand the growth control of ultrathin films and their functional devices. |
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| Keywords: | atomic layer deposition vanadium pentoxide thin films |
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