| 不同结构的碲镉汞长波光伏探测器的暗电流研究 |
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| 引用本文： | 叶振华,胡晓宁,张海燕,廖清君,李言谨,何力.不同结构的碲镉汞长波光伏探测器的暗电流研究[J].红外与毫米波学报,2004,23(2):86-90. |
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| 作者姓名： | 叶振华 胡晓宁 张海燕 廖清君 李言谨 何力 |
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| 作者单位： | 中国科学院上海技术物理研究所材料与器件中心,上海,200083 |
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| 基金项目： | 中国科学院知识创新工程资助项目 |
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| 摘 要： | 摘要对B^ 注入的n-on-p平面结和分子束外延(MBE)技术原位铟掺杂的n-on-p台面异质结的碲镉汞(HgCdTe)长波光伏探测器暗电流进行了对比分析．与n-on-p平面结器件相比，原位掺杂的n-on-p台面异质结器件得到较高的零偏动态阻抗一面积值(RoA)．通过与实验数据拟合，从理论上计算了这两种结构的器件在不同温度下的RoA和在不同偏压下的暗电流，得到一些相关的材料和器件性能参数．
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| 关 键 词： | 光伏探测器 暗电流 碲镉汞材料 异质结 分子束外延技术 铟掺杂 红外探测器 |
| 文章编号： | 1001-9014(2004)02-0086-05 |
| 收稿时间： | 2002/11/8 |
| 修稿时间： | 2002年11月8日 |
STUDY OF DARK CURRENT FOR MERCURY CADMIUM TELLURIDE LONG-WAVELENGTH PHOTODIODE DETECTOR WITH DIFFERENT STRUCTURES |
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| YE Zhen,Hua,HU Xiao,Ning,ZHANG Hai,Yan,LIAO Qing,Jun,LI Yan,Jing,HE li.STUDY OF DARK CURRENT FOR MERCURY CADMIUM TELLURIDE LONG-WAVELENGTH PHOTODIODE DETECTOR WITH DIFFERENT STRUCTURES[J].Journal of Infrared and Millimeter Waves,2004,23(2):86-90. |
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| Authors: | YE Zhen Hua HU Xiao Ning ZHANG Hai Yan LIAO Qing Jun LI Yan Jing HE li |
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| Abstract: | The dark current mechanism of B + implanted n on p planar photodiode and Indium doped n + n p hetero junction mesa photodiode formed in situ by molecular beam epitaxy for Mercury Cadmium Telluride long wavelength detector was compared and analyzed.It was found that n + n p hetero juction mesa photodiode doped in situ had higher zero bias resistance area product ( R 0A ) than n on p planar photodiode in our experiment. By fitting with experimental data, R 0A at different temperature and the dark current at different bias voltage of the two long wavelength devices were calculated theoretically, and some correlated parameters were also achieved. |
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| Keywords: | photodiode HgCdTe dard current R 0A heterojunction |
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