集成式HgCdTe红外双色探测器列阵

首次报道了集成中波 1/中波 2 (MW1/MW2 )的HgCdTe红外双色探测器的材料生长、器件制备及其性能 .采用分子束外延 (MBE)技术 ,生长了p p P N型Hg1-xCdxTe多层异质结材料 .通过B+ 注入、台面腐蚀、爬坡金属化、台面侧向钝化及互连等工艺 ,得到了 80元的原理型HgCdTe红外双色探测器 .纵向上背靠背的 2个光电二极管分别有电极输出 ,确保了空间上同步和时间上同时的探测 ,并能独立地选择最佳工作偏压 .它适于常规的背照射工作方式 ,且有大的空间填充因子 .在液氮温度下 ,2个波段的光电二极管截止波长λc 分别为 3.0 4 μm和 5 .74 μm ,对应的R0 A值为 3.85× 10 5Ωcm2 和 3.0 2× 10 2 Ωcm2 .测得MW1、MW2的峰值探测率Dλp 分别为 1.5 7× 10 11cmHz1/2 /W和 5 .6 3×10 10 cmHz1/2 /W .得到 2个波段的光谱响应 ,且MW2光电二极管的光谱串音为 0 .4 6 % ,MW1光电二极管的光谱串音为 6 .34% .

STUDY OF INTEGRATED MW1/MW2 TWO-COLOR HgCdTe INFRARED DETECTOR ARRAYS

The material growth, device fabrication and performance of integrated MW1/MW2 two-color HgCdTe infrared detector was reported. A four-layer p-p-P-N hetero-junction Hg 1-xCd xTe film was grown in-situ by molecular beam epitaxy technology. The preliminary eighty unit cells two-color HgCdTe infrared detector was obtained by B +-implantation, mesa etching, side-wall metallization, side-wall passivation and hybridization. The independent electrical assess to each of two spatially collated back-to-back HgCdTe photodiodes allows the photocurrents of shorter and longer wavelength to be separated, and ensures the spatial uniformity and temporal simultaneity. It was operated in the backside-illuminated mode with infrared radiation incidence on the substrate surface, and with large fill-factor. At liquid nitrogen temperature, the cut-off wavelengths of the two bands are 3.04μm and 5.74μm individually, the zero-bias dynamic resistance (R 0A) products of them are 3.852×10 5Ωcm 2and 3.015×10 2Ωcm 2,the peak detectivities Dλp* are 1.571.57×1011cmHz1/2/W和5.63×1010cmHz1/2/W respectively.Two-band spectral response was obtained.The spetral crosstalk of MW1 photodiode is 6.34% and that MW2 photodiode is 0.46%.