| 基于石墨烯/铟砷量子点/砷化镓异质结新型光电探测器 |
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| 引用本文： | 胡之厅,甘桃,杜磊,张家振,徐煌,韩赛垒,徐鹤靓,刘锋,陈永平,陈刚.基于石墨烯/铟砷量子点/砷化镓异质结新型光电探测器[J].红外与毫米波学报,2019,38(3):269-274. |
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| 作者姓名： | 胡之厅 甘桃 杜磊 张家振 徐煌 韩赛垒 徐鹤靓 刘锋 陈永平 陈刚 |
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| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;上海师范大学,上海200234;中国科学院上海技术物理研究所红外成像材料和器件重点实验室,上海,200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;上海理工大学材料科学与工程学院,上海200093;上海师范大学,上海,200234 |
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| 基金项目： | 国家自然科学基金(No. 61474130 and U1531109)，上海自然科学基金(No. 17142200100) |
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| 摘 要： | 研究了一种石墨烯/铟砷量子点/砷化镓界面形成的异质结探测器的暗电流特性以及光电响应性质.虽然石墨烯具有很高的电子迁移率,但受限于较低的光子吸收率,使其在光电探测领域的应用受到了限制.而半导体量子点具有量子效率高,光吸收能力强等独特优点.于是利用石墨烯-砷化铟量子点-砷化镓异质结结构制备了一种新型光电探测器.并对该探测器的响应率、I-V特性曲线、暗电流特性、探测率、开关比等关键性能进行了研究.其在637 nm入射光情况下的响应率、探测率以及开关比可分别达到为17. 0 m A/W、2. 3×10~(10)cm Hz~(1/2)W~(-1)和1×10~3.而当入射光为近红外波段的940纳米时,响应率进一步增加到了207 m A/W.同时,还证实了该器件的暗电流、肖特基势垒高度和理想因子对温度的都具有较高的依赖性都较强.
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| 关 键 词： | 石墨烯 砷化镓 量子点 异质结构 肖特基结 |
| 收稿时间： | 2018/5/21 0:00:00 |
| 修稿时间： | 2018/6/4 0:00:00 |
A novel photodetector based on Graphene / InAs quantum dots /GaAs hetero-junction |
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| HU Zhi-Ting,GAN Tao,DU Lei,ZHANG Jia-Zhen,XU Huang,HAN Sai-Lei,XU He-Liang,LIU Feng,CHEN Yong-Ping and CHEN Gang.A novel photodetector based on Graphene / InAs quantum dots /GaAs hetero-junction[J].Journal of Infrared and Millimeter Waves,2019,38(3):269-274. |
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| Authors: | HU Zhi-Ting GAN Tao DU Lei ZHANG Jia-Zhen XU Huang HAN Sai-Lei XU He-Liang LIU Feng CHEN Yong-Ping and CHEN Gang |
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| Affiliation: | State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai Normal University,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences |
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| Abstract: | Due to the ultra high electron mobility, graphene has been proposed as a prospetive candidate for the photodetection. Nevertheless the relatively low photo absorption limits its potential application. On the other hand, the semiconductor quantum dots has exhibited high quantum efficiency and strong optical absorption. A novel photodetector by the incorporation of graphene with InAs quantum dots on GaAs substrate has been proposed. The performance of the fabricated photodetector, such like photoresponse, dark current, and time response, have been extensively studied. The photodetector based on graphene/InAs QDs/GaAs hybrid hetero-junction demonstrated that for the visible range of 637 nm a responsivity of about 17.0 mA/W, and detectivity of 2.3×1010 cmHz1/2 W-1, with an on/off ratio of about 1×103 could be achieved. Moreover a stronger dependence of dark current, Schottky barrier height and ideality factor on temperature has also been observed. |
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| Keywords: | Graphene GaAs quantum dots heterostructure Schottky junction |
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