| 平面型InGaAs探测结构中p型杂质的二维扩散行为研究 |
| |
| 引用本文： | 张帅君,李天信,王文静,李菊柱,邵秀梅,李雪,郑时有,庞越鹏,夏辉.平面型InGaAs探测结构中p型杂质的二维扩散行为研究[J].红外与毫米波学报,2022,41(1):262-268. |
| |
| 作者姓名： | 张帅君 李天信 王文静 李菊柱 邵秀梅 李雪 郑时有 庞越鹏 夏辉 |
| |
| 作者单位： | 上海理工大学材料科学与工程学院,上海200093;中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083,中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083,中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;上海师范大学数理学院,上海200234,中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083,上海理工大学材料科学与工程学院,上海200093 |
| |
| 基金项目： | 国家自然科学基金（11574336， 11991063）；中国科学院战略性先导科技专项（XDB43010200）；上海市自然科学基金（18JC1420401， 19ZR1465700， 14ZR1446200） |
| |
| 摘 要： | 在平面型InGaAs P-i-N短波红外探测结构中,p型杂质在材料中纵向和横向的扩散是决定pn结位置及其光电性能的主要因素,本文采用扫描电容显微方法(SCM)获得了扩散成结InGaAs/InAlAs像元剖面的二维载流子分布,从而实现对不同扩散条件下pn电场结的精确定位和分析.此外,对于InGaAs/InP探测器,SCM...
|
| 关 键 词： | 扫描电容显微(SCM) InGaAs平面型探测器 扩散行为 光电流响应 |
| 收稿时间： | 2021/3/11 0:00:00 |
| 修稿时间： | 2022/1/17 0:00:00 |
SCM study on the 2D diffusion behavior of p-type impurities in planar InGaAs detectors |
| |
| ZHANG Shuai-Jun,LI Tian-Xin,WANG Wen-Jing,LI Ju-Zhu,SHAO Xiu-Mei,LI Xue,ZHENG Shi-You,PANG Yue-Peng and XIA Hui.SCM study on the 2D diffusion behavior of p-type impurities in planar InGaAs detectors[J].Journal of Infrared and Millimeter Waves,2022,41(1):262-268. |
| |
| Authors: | ZHANG Shuai-Jun LI Tian-Xin WANG Wen-Jing LI Ju-Zhu SHAO Xiu-Mei LI Xue ZHENG Shi-You PANG Yue-Peng and XIA Hui |
| |
| Affiliation: | (School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Mathematics and Science College,Shanghai Normal University,Shanghai 200234,China;State Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China) |
| |
| Abstract: | Scanning Capacitance Microscopy(SCM)was applied to obtain the 2-dimensional carrier distribution on the cross-section of planar type InGaAs/InAlAs pixels.The profile of pn junction in the device structure was able to be depicted with high space resolution.Besides,for InGaAs/InP detector,the SCM study helps to disclose the distinct diffusion behavior of p-type impurities in different functional layers.The lateral diffusion speed of zinc in InGaAs absorption layer was decided as 3.3 times than that in the depth direction,which is significantly higher than the lateral to depth ratio of 0.67 in the n-InP cap layer,this could affect both the capacitance and dark current properties of the diode pixels. |
| |
| Keywords: | Scanning Capacitance Microscopy(SCM) planar InGaAs detector diffusion behavior photocurrent response |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
|
