| 75 GHz 13.92 dBm InP DHBT 共射共基功率放大器 |
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| 引用本文： | 曹玉雄,苏永波,吴旦昱,金智,王显泰,刘新宇.75 GHz 13.92 dBm InP DHBT 共射共基功率放大器[J].红外与毫米波学报,2012,31(4):294-297. |
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| 作者姓名： | 曹玉雄 苏永波 吴旦昱 金智 王显泰 刘新宇 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | National Basic Research Programme of China under Grant No 2010CB327502 |
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| 摘 要： | 报道了基于InP基双屏质结双板晶体管(DHBT)工艺的四指共射共基75 GHz微波单片集成(MMIC)功率放大器,器件的最高振荡频率fmax为150 GHz.放大器的输出极发射极面积为15μm×4μm.功率放大器在75 GHz时功率增益为12.3 dB,饱和输出功率为13.92 dBm.放大器在72.5 GHz处输入为2 dBm时达到最大输出功率14.53 dBm.整个芯片传输连接采用共面波导结构,芯片面积为1.06 mm×0.75 mm.
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| 关 键 词： | InP双异质结双极晶体管(DHBT) 微波单片集成 毫米波 功放 |
| 收稿时间： | 2011/5/13 |
| 修稿时间： | 2011/12/14 0:00:00 |
A 75 GHz 13.92 dBm InP DHBT cascode power amplifier |
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| CAO Yu-Xiong,SU Yong-Bo,WU Dang-Yu,JIN Zhi,WANG Xian-Tai and LIU Xin-Yu.A 75 GHz 13.92 dBm InP DHBT cascode power amplifier[J].Journal of Infrared and Millimeter Waves,2012,31(4):294-297. |
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| Authors: | CAO Yu-Xiong SU Yong-Bo WU Dang-Yu JIN Zhi WANG Xian-Tai and LIU Xin-Yu |
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| Affiliation: | Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences and Institute of Microelectronics of Chinese Academy of Sciences |
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| Abstract: | A 75 GHz monolithic-microwave integrated-circuit(MMIC) four-fingers cascode power amplifier in InP double heterojunction bipolar transistors(DHBT) technology w ith an f max about 150 GHz w as reported.The amplifier has 15 × 4 μm 2 total emitter area and exhibits a pow er gain of 12.3 dB at 75 GHz w ith 13.92 dBm output saturated pow er.The amplifier achieves a peak output pow er of 14.53 dBm w ith 2 dBm input pow er at 72.5 GHz.The MMIC adopts coplanar w aveguide(CPW) structure as the transmission line structure w ith area of 1.06 × 0.75 mm 2. |
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| Keywords: | InP DHBT MMIC millimeter wave power amplifier |
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