| CZ—Si辐照缺陷的红外研究 |
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| 引用本文： | 祁明维,施天生.CZ—Si辐照缺陷的红外研究[J].红外与毫米波学报,1991,10(1):33-38. |
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| 作者姓名： | 祁明维 施天生 |
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| 作者单位： | 中国科学院上海冶金研究所，中国科学院上海冶金研究所，中国科学院上海冶金研究所 上海 200050，上海 200050，上海 200050 |
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| 摘 要： | 报道了高碳CZ-Si经中子和电子辐照后产生氧-缺陷复合体的研究结果。电子辐照产生的830cm~(-1)峰在退火时转化成889、904、969、986、1000及1006cm~(-1)峰的退火曲线支持了Corbett和Stein提出的多重氧-缺陷复合体的模型。中子辐照产生的830cm~(-1)峰在退火时出现宽化现象是由于存在与830cm~(-1)峰组态相似的842、834和827cm~(-1)等卫星峰所致,并提出了对应于这些卫星峰的可能的缺陷模型。
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| 关 键 词： | 红外光谱 辐照效应 缺陷 硅 |
INFRARED STUDY ON RADIATION DEFECTS IN CZ-Si |
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| QI MINGWEI,SHI TIANSHENG,CAI PEIXING.INFRARED STUDY ON RADIATION DEFECTS IN CZ-Si[J].Journal of Infrared and Millimeter Waves,1991,10(1):33-38. |
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| Authors: | QI MINGWEI SHI TIANSHENG CAI PEIXING |
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| Abstract: | The infrared study on oxygen-defect oomplexes in electron-irradiated and neutron-inradiated CZ-Si containing high carbon are reported. The annealing behavior of electron irradiation induced 830cm~(-1) band transforming to 889, 904, 969, 986 1000 and 1006cm~(-1) bands supports the multiple oxygen-defect complexes model previously proposed by Corbett and Stein. The broadening of neutron irradiation induced 830cm~(-1) band during annealing is due to the presence of satellite bands 842, 834, and 827cm~(-1) whese configuration is similar to that of 830cm~(-1) band. Three defect models are tentatively proposed to account for these satellite bands. |
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| Keywords: | infrared spectra radiation effects silicon (Si) |
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