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1MeV电子辐照对碲镉汞中波光导器件的影响
引用本文:乔辉,贾嘉,陈新禹,李向阳,龚海梅.1MeV电子辐照对碲镉汞中波光导器件的影响[J].红外与毫米波学报,2004,23(3):172-175.
作者姓名:乔辉  贾嘉  陈新禹  李向阳  龚海梅
作者单位:中国科学院上海技术物理研究所,传感技术国家重点实验室,上海,200083
基金项目:上海市科学技术委员会部分资助项目(011661082,OIQA14045)
摘    要:研究了1MeV电子辐照对中波碲镉汞光导器件的影响.通过测试辐照前后光导器件的室温和低温体电阻、响应光谱、电流响应率和探测率等性能参数,结果发现经过电子辐照,器件的峰值和截止波长在辐照后向短波方向移动.在辐照剂量大于10^15/cm^2时,器件的室温电阻和响应率明显下降.探测率由于噪声的影响无明显变化趋势.

关 键 词:碲镉汞  光导型探测器  电子辐照  辐照效应  电流响应率  响应光谱
文章编号:1001-9014(2004)03-0172-04
收稿时间:2002/12/11
修稿时间:2002年12月11

INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS
QIAO Hui,JIA Ji,CHEN Xin-Yu,LI Xiang-Yang,GONG Hai-Mei.INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS[J].Journal of Infrared and Millimeter Waves,2004,23(3):172-175.
Authors:QIAO Hui  JIA Ji  CHEN Xin-Yu  LI Xiang-Yang  GONG Hai-Mei
Abstract:Radiation effects of 1MeV electron on middle wavelength Hg 1-xCd xTe photoconductive detectors were studied. Room and liquid nitrogen temperatures resistance, response spectrum, current responsivity and detectivity were measured before and after irradiation. It is observed that after irradiation, the detectors’ peak and cutoff wavelength move towards short wavelength; the room temperature resistance and current responsivity become decreasing when irradiation dosage is larger than 10 15/cm 2; the detectivity doesn’t show a monotonical change owing to the influnce of noise.
Keywords:HgCdTe  photoconductive detectors  electron irradiation  radiation effects  
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