| 基于65 nm标准CMOS工艺的3.0 THz 探测器 |
| |
| 引用本文： | 方桐,刘力源,刘朝阳,冯鹏,李媛媛,刘俊岐,刘剑,吴南健. 基于65 nm标准CMOS工艺的3.0 THz 探测器[J]. 红外与毫米波学报, 2020, 39(1): 56-64. DOI: 10.11972/j.issn.1001-9014.2020.01.009 |
| |
| 作者姓名： | 方桐 刘力源 刘朝阳 冯鹏 李媛媛 刘俊岐 刘剑 吴南健 |
| |
| 作者单位： | 中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083;中国科学院大学材料与光电研究中心,北京 100049;中国科学院半导体研究所半导体材料科学重点实验室,北京 100083;中国科学院大学材料与光电研究中心,北京 100049 |
| |
| 基金项目： | 国家重点研发计划资助 2016YFA0202200;中国科学院青年创新促进会计划 2016107;北京市科技计划项目 Z181100008918009国家重点研发计划资助（2016YFA0202200），中国科学院青年创新促进会计划（2016107），北京市科技计划项目（Z181100008918009）. |
| |
| 摘 要： | 基于Dyakonov和Shur等离子体波振荡原理设计并流片制备了一种采用65 nm标准CMOS工艺的3.0THz探测器,探测器包括贴片天线、NMOS场效应晶体管、匹配网络及陷波滤波器。探测器在室温条件下可达到526 V/W的响应率(Rv)和73 pW/Hz1/2的噪声等效功率(NEP)。采用该探测器和步进电机搭建了太赫兹扫描成像系统,获得了太赫兹源出射光斑的远场形状,光斑的半高宽(FWHM)为240μm;并对聚甲醛牙签和树叶进行了扫描成像实验,结果表明CMOS太赫兹探测器在成像领域有潜在的应用前景。
|
| 关 键 词： | CMOS 太赫兹 太赫兹成像 太赫兹探测器 |
| 收稿时间： | 2019-05-08 |
| 修稿时间： | 2019-12-17 |
A 3.0 THz detector in 65 nm standard CMOS process |
| |
| FANG Tong,LIU Li-Yuan,LIU Zhao-Yang,FENG Peng,LI Yuan-Yuan,LIU Jun-Qi,LIU Jian and WU Nan-Jian. A 3.0 THz detector in 65 nm standard CMOS process[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 56-64. DOI: 10.11972/j.issn.1001-9014.2020.01.009 |
| |
| Authors: | FANG Tong LIU Li-Yuan LIU Zhao-Yang FENG Peng LI Yuan-Yuan LIU Jun-Qi LIU Jian WU Nan-Jian |
| |
| Affiliation: | State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China,State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
| |
| Abstract: | A 3.0 THz detector based on plasma-wave theory proposed by Dyakonov and Shur was designed and fabricated in 65 nm standard CMOS process,the detector consists of a patch antenna,a NMOS field effect transistor,a matching network,and a notch filter.The detector can achieve a roomtemperature responsivity(Rv)of 526 V/W and a noise equivalent power(NEP)of 73 pW/Hz1/2.The terahertz scanning imaging system was built with the detector and stepper motor,and the far-field shape of the terahertz source beam was obtained,the full width at half maximum(FWHM)of the beam is 240μm;and the image of the polyformaldehyde toothpick and tree leaf were obtained through the scanning imaging system,it shows that CMOS terahertz detectors have potential applications in the imaging field. |
| |
| Keywords: | CMOS THz terahertz imaging terahertz detector |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
|
