首页 | 本学科首页   官方微博 | 高级检索  
     

一种新型超高频射频识别射频前端电路设计
引用本文:汪飞,王春华,何海珍.一种新型超高频射频识别射频前端电路设计[J].微电子学与计算机,2011,28(1):11-15,22.
作者姓名:汪飞  王春华  何海珍
作者单位:湖南大学,计算机与通信学院,湖南,长沙,410082
基金项目:国家自然科学基金资助项目(60776021); 湖南省长沙市科技计划重点项目(K0902012-11)
摘    要:设计了一种低功耗高线性度的新型超高频射频识别射频前端电路.在LNA的设计中,通过在输入端采用二阶交调电流注入结构以提高线性度,在输出端采用开关电容结构以实现工作频率可调;在混频器的设计中,在输入端采用同LNA相同的方法以提高线性度,而在输出端采用动态电流注入结构以降低噪声.该电路采用0.18μmCMOS工艺,供电电压为1.2V,仿真结果如下:输入阻抗S11为-23.98dB,IIP3为5.05dBm,整个射频前端电路的增益为10dB.

关 键 词:超高频射频识别  射频前端  低噪声放大器(LNA)  混频器  版图  线性度

A Novel UHF RFID RF Front End Circuits Design
WANG Fei,WANG Chun-hua,HE Hai-zhen.A Novel UHF RFID RF Front End Circuits Design[J].Microelectronics & Computer,2011,28(1):11-15,22.
Authors:WANG Fei  WANG Chun-hua  HE Hai-zhen
Affiliation:WANG Fei,WANG Chun-hua,HE Hai-zhen(School of Computer and Communication,Hunan University,Changsha 410082,China)
Abstract:This paper mainly introduced the UHF RFID RF front end circuit design.In the LNA design,it improved the linearity by using the 2nd-intermodulation injection structure at the input terminal,and achieved the operating frequency adjustable by using switch capacitor at the output terminal;in the mixer design,it improved the linearity by the same way as LNA,and eliminated the noise by using dynamic current injection structure at the output terminal.The circuit has been fabricated with a 0.18 μm CMOS process,the supply voltage is 1.2 V,the simulation results show that:the impedance matching S11 is-23.98 dBm,IIP3 is 5.05 dB,and the overall conversion gain of the front end circuit is 10 dB.
Keywords:UHF RFID  RF front end  LNA  mixer  layout  linearity  
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号