| 基于SiGe工艺的高增益射频功率放大器 |
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| 引用本文： | 胡锦,陶可欣,郝明丽,张晓轲.基于SiGe工艺的高增益射频功率放大器[J].微电子学与计算机,2012,29(2):18-21. |
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| 作者姓名： | 胡锦 陶可欣 郝明丽 张晓轲 |
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| 作者单位： | 1. 湖南大学物理与微电子科学学院,湖南长沙,410082
2. 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 基于0.13μm SiGe HBT工艺,设计应用于无线局域网(WLAN)802.11b/g频段范围内的高增益射频功率放大器.该功放工作在AB类,由三级放大电路级联构成,并带有温度补偿和线性化的偏置电路.仿真结果显示:功率增益高达30dB,1dB压缩点输出功率为24dBm,电路的S参数S11在1.5～4GHz大的频率范围内均小于-17dB,S21大于30dB,输出匹配S22小于-10dB,S12小于-90dB.最高效率可达42.7%,1dB压缩点效率为37%.
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| 关 键 词： | 射频 功率放大器 SiGe |
High Power Gain RF Power Amplifier Based on SiGe Technology |
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| HU Jin,TAO Ke-xin,HAO Ming-li,ZHANG Xiao-ke.High Power Gain RF Power Amplifier Based on SiGe Technology[J].Microelectronics & Computer,2012,29(2):18-21. |
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| Authors: | HU Jin TAO Ke-xin HAO Ming-li ZHANG Xiao-ke |
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| Affiliation: | 1(1 School of Physics and Microelectronics Science,Hunan University,Changsha 410082,China; 2 Institute of Microelectronics,Chinese Academy of Science,Beijing 100029,China) |
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| Abstract: | A high power gain RF power amplifier was designed for WLAN 802.11b/g based on 0.13μm SiGe HBT technology.The PA composed of three stage amplifiers worked in Class AB,with temperature compensation and linearing bias circuit.The simulation results showed that the power amplifier had a power gain of 30 dB,an output 1 dB compression point of 24 dBm,the S parameter of S11 less than-17 dB in a wide frequency range from 1.5 GHz to 4 GHz and the S21 more than 30 dB,the output match S22 less than-10 dB and the S12 less than-90 dB,a maximum power added efficiency(PAE) of 42.7% and the efficiency at 1 dB compression point is 37%. |
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| Keywords: | ratio power amplifier SiGe |
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