| 双栅氧CMOS工艺研究 |
| |
| 引用本文： | 李桦,宋李梅,杜寰,韩郑生.双栅氧CMOS工艺研究[J].微电子学与计算机,2005,22(11):5-6,9. |
| |
| 作者姓名： | 李桦 宋李梅 杜寰 韩郑生 |
| |
| 作者单位： | 中国科学院微电子研究所,北京,100029 |
| |
| 摘 要： | 双栅氧工艺(dual gate oxide)在高压CMOS流程中得到了广泛的应用,此项工艺可以把薄栅氧器件和厚栅氧器件集成在同一个芯片上.文章介绍了常用的两种双栅氧工艺步骤并分析了它们的优劣.在此基础上,提出了一种实现双栅氧工艺的方法.
|
| 关 键 词： | 双栅氧工艺 高压CMOS流程 |
| 文章编号： | 1000-7180（2005）11-005-02 |
| 收稿时间： | 2005-07-28 |
| 修稿时间： | 2005-07-28 |
Study of Dual Gate Oxide Technology in CMOS Process |
| |
| LI Hua,SONG Li-mei,DU Huan,HAN Zheng-sheng.Study of Dual Gate Oxide Technology in CMOS Process[J].Microelectronics & Computer,2005,22(11):5-6,9. |
| |
| Authors: | LI Hua SONG Li-mei DU Huan HAN Zheng-sheng |
| |
| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
| |
| Abstract: | The dual gate oxide(DGO) technology has been widely used in high-voltage CMOS process, it can integrate both thick gate oxide device and thin gate oxide device in a same chip. Two commonly used technologies are introduced and the advantages and disadvantages of them are discussed. Based on the results a new way to fabricate DGO is proposed in this paper. |
| |
| Keywords: | Dual gate oxide High-voltage CMOS process |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
