MCM-D技术电热特性综述

本文主要说明了淀积型多芯片组件(MCM-D)技术所使用的主要材料的热特性。此技术采用倒装片技术把硅芯片安装到硅基板上。阐述了薄膜电阻和接触电阻的测量与所使用金属的温度范围-28℃-100℃的比较。一套典型的试验结构诸如开尔文接触、横桥电阻(CBR)及Van der Pauw 结构不仅已用于此技术,而且为了测试通过球倒装片连接的接触电阻,采用一新的开尔文式结构。已获得MCM封装的热模型,并考虑由此类封装增加的所有的热电阻。

Survey of Electrical and Thermal Characterization of an MCM-D Technology

In this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. Measurements of sheet resistance and contact resistance versus temperature in the range of -28℃ to 100℃ of the metals used in the technology are shown. A set of classic test structures such as Kelvin contacts, cross bridge resistors (CBR), and Van der Pauw structures have been used for this purpose as well as a new Kelvin-like structure to test the contact resistance of the Flip Chip connection through the ball. A thermal model of the MCM-D package has been obtained , taking into account all the thermal resistances added by this kind of package.