| 一种二次补偿的带隙电压基准 |
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| 引用本文： | 陈光华,陈俊飞,高博.一种二次补偿的带隙电压基准[J].电子与封装,2019,19(6):29-31,40. |
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| 作者姓名： | 陈光华 陈俊飞 高博 |
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| 作者单位： | 四川大学物理科学与技术学院微电子技术四川省重点实验室,成都,610064;四川邮电职业技术学院,成都,610066 |
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| 摘 要： | 为了降低带隙基准电压源的温漂系数,设计了一种采用β倍增器电流源和IPTAT2电流源作为二次曲率补偿技术的超低温漂基准电压源。运用SMIC0.18μm工艺,仿真结果表明,在-40~85℃,该基准电压源的温漂系数为0.336×10^-6/℃,大大降低了温度对电压源的影响。
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| 关 键 词： | 带隙基准 温度系数 β倍增器电流源 IPTAT2电流源 |
A Quadratic Compensated Bandgap Voltage Reference |
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| CHEN Guanghua,CHEN Junfei,GAO Bo.A Quadratic Compensated Bandgap Voltage Reference[J].Electronics & Packaging,2019,19(6):29-31,40. |
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| Authors: | CHEN Guanghua CHEN Junfei GAO Bo |
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| Affiliation: | (Sichuan key Laboratory of Microelectronics,College of Physics and Technology,Sichuan University,Chengdu 610064,China;Sichuan Vocational College of Posts and Telecommunications,Chengdu 610066,China) |
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| Abstract: | In order to reduce the temperature drift coefficient of the bandgap reference voltage source,an ultra-low temperature drift reference voltage source was designed using a beta multiplier current source and an IPTAT2 current source as a quadratic curvature compensation technique.The simulation results of SMIC0.18μm process show that the temperature drift coefficient of the reference voltage source is 0.336×10^-6/℃at-40~85℃,which greatly reduces the influence of temperature on the voltage source. |
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| Keywords: | bandgap reference temperature system βmultiplier current source IPTAT2 current source |
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