SONOS非易失性存储器件研究进展

随着半导体存储器件的小型化、微型化，传统多晶硅浮栅存储因为叠层厚度过大，对隧穿氧化层绝缘性要求过高而难以适应未来存储器的发展要求。最近，基于绝缘性能优异的氮化硅的SONOS非易失性存储器件，以其相对于传统多晶硅浮栅存储器更强的电荷存储能力、易于实现小型化和工艺简单等特性而重新受到重视。文章论述了SONOS非易失性存储器件的存储原理和存储性能的影响因素研究进展，并在材料、工艺与结构设计等方面对SONOS存储器件性能改进的研究进展情况进行了分析和讨论。

Progress of SONOS Nonvolatile Memory Device

With the miniaturization and micromation of semiconductor memories,conventional polysilicon floating-gate memories are unable to meet the developments of future memories,because of its high stack height and extreme good insulating performance requirements of the tunnel oxide.Recently,nonvolatile memory device based on excellent insulator silicon nitride,have been regarded again because of its better charge storing capability,continual size minimizing speciality and simple technics comparing with conventiona...