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CdS纳米锥的合成以及光致发光性能研究
引用本文:陈志刚,邹进,刘岗,李锋,逯高清,成会明.CdS纳米锥的合成以及光致发光性能研究[J].电子显微学报,2007,26(5):423-427.
作者姓名:陈志刚  邹进  刘岗  李锋  逯高清  成会明
作者单位:1. 沈阳材料科学国家(联合)实验室,中国科学院金属研究所,辽宁,沈阳,110016;ARC Centre of Excellence for Functional Nanomaterials,The University of Queensland,QLD 4072,Australia
2. School of Engineering and Centre for Microscopy and Microanalysis,The University of Queensland,St Lucia QLD 4072,Australia
3. 沈阳材料科学国家(联合)实验室,中国科学院金属研究所,辽宁,沈阳,110016
基金项目:Key Research Programof M0ST,China(2006CB932703); Australia Research Council Project.
摘    要:将商用CdS粉在真空炉中通过简单的热蒸发获得了大量高纯的CdS锥状纳米结构.扫描电子显微镜(SEM)、透射电子显微镜(TEM)观察和X射线衍射谱(XRD)的分析表明:CdS纳米锥状晶体为六角硫镉矿晶体结构,其形状为典型的纳米锥,晶格常数为a=0.413 nm,c=0.671 nm,沿着0001]方向生长.CdS纳米锥的长度是20 μm到50 μm,直径从~100 nm减少到~20 nm.本文还详细研究了CdS纳米锥晶体的拉曼特性及其在激光辐射下的室温光致发光行为,探讨了绿光(波长为~512 nm)发射的机制.结果表明,这种CdS纳米锥可能用于新颖的光学器件.

关 键 词:CdS  高纯度纳米锥  光致发光  CdS  high  purity  nanocones  photoluminescence
文章编号:1000-6281(2007)05-0423-05
修稿时间:2007-06-01

Synthesis and photoluminescence of CdS nanocones
CHEN Zhi-gang,ZOU Jin,LIU Gang,LI Feng,LU Gao-qing,CHENG Hui-ming.Synthesis and photoluminescence of CdS nanocones[J].Journal of Chinese Electron Microscopy Society,2007,26(5):423-427.
Authors:CHEN Zhi-gang  ZOU Jin  LIU Gang  LI Feng  LU Gao-qing  CHENG Hui-ming
Affiliation:1.Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang Liaoning 110016,China;2.ARC Centre for Functional Nanomaterials,The University of Queensland,QLD 4072,Australia;3.School of Engineering and Centre for Microscopy and Microanalysis,The University of Queensland,QLD 4072,Australia
Abstract:High purity CdS nanocones were obtained through a simple thermal evaporation process with highly active CdS nanoparticles as the evaporation source. It was found that these CdS nanocones had a single crystal hexagonal wurtzite structure growing along the 0001 ] direction. They had a cone-shaped morphology with typical length of 20 μm to 50 μm and their diameter decreases from ~ 100 nm to 20 nm with lattice constants of a = 0.413 nm and c = 0.671 nm. The photoluminescence (PL)characterization of the CdS nanocones shows strong near-band UV emission (about 512 nm), which indicates that the CdS nanocones have potential application in optoelectronic devices.
Keywords:CdS  high purity nanocones  photoluminescence
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