| 非晶SiHxOy薄膜的强可见荧光 |
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| 引用本文： | 黄翀,石旺舟,欧阳艳东.非晶SiHxOy薄膜的强可见荧光[J].应用激光,2000,20(3). |
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| 作者姓名： | 黄翀 石旺舟 欧阳艳东 |
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| 作者单位： | 汕头大学物理系汕头 515063 |
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| 基金项目： | 苏州大学薄膜重点实验室资助课题 |
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| 摘 要： | 采用 PECVD方法制备了非晶 Si Hx Oy 薄膜 ,室温下观察到了性能稳定的强荧光发射现象 ,其中3 65nm、4 70 nm、73 0 nm三个带由分立能级的荧光峰组成 ,说明这些荧光带起源于氧有关的能级。通过能级间相对荧光强度的变化解释了发射带中心位置的移动现象
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| 关 键 词： | α-SiH_xO_y薄膜 荧光特性 杂质能级 |
Strong Visible Photoluminescence from α-SiHxOy Thin Films |
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| Huang Chong,Shi Wangzhou,Ouyang Yandong.Strong Visible Photoluminescence from α-SiHxOy Thin Films[J].Applied Laser,2000,20(3). |
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| Authors: | Huang Chong Shi Wangzhou Ouyang Yandong |
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| Abstract: | SiHxOythin films were deposited by PECVD thchnique,Strong visible photoluminescence bands and the peaks centered at365,470nm,730nm were observed from asprepared samples at room temperature. Experimental results show that PL bands and peaks are related to the oxygen defect levels. The possible origin and variation of PL bands and peaks were discussed according to the level mode. |
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| Keywords: | SiH_xO_y thin film photoluminescence characteristics defect level |
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