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Kitkaite NiTeSe,an Ambient-Stable Layered Dirac Semimetal with Low-Energy Type-II Fermions with Application Capabilities in Spintronics and Optoelectronics |
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| Authors: | Ivana Vobornik Anan Bari Sarkar Libo Zhang Danil W Boukhvalov Barun Ghosh Lesia Piliai Chia-Nung Kuo Debashis Mondal Jun Fujii Chin Shan Lue Mykhailo Vorokhta Huaizhong Xing Lin Wang Amit Agarwal Antonio Politano |
| Affiliation: | 1. CNR-IOM, TASC Laboratory, Area Science Park-Basovizza, Trieste, 34139 Italy;2. Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016 India;3. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083 China
Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620 China;4. College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037 P. R. China Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Ekaterinburg, 620002 Russia;5. Department of Surface and Plasma Science Prague, Charles University, V Holesovickaˇch 2, Prague 8, Prague, 18000 Czech Republic;6. Department of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, 70101 Taiwan Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei, 10601 Taiwan;7. Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, 201620 China;8. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083 China;9. INSTM and Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, L'Aquila, AQ, 67100 Italy |
| Abstract: | The emergence of Dirac semimetals has stimulated growing attention, owing to the considerable technological potential arising from their peculiar exotic quantum transport related to their nontrivial topological states. Especially, materials showing type-II Dirac fermions afford novel device functionalities enabled by anisotropic optical and magnetotransport properties. Nevertheless, real technological implementation has remained elusive so far. Definitely, in most Dirac semimetals, the Dirac point lies deep below the Fermi level, limiting technological exploitation. Here, it is shown that kitkaite (NiTeSe) represents an ideal platform for type-II Dirac fermiology based on spin-resolved angle-resolved photoemission spectroscopy and density functional theory. Precisely, the existence of type-II bulk Dirac fermions is discovered in NiTeSe around the Fermi level and the presence of topological surface states with strong (≈50%) spin polarization. By means of surface-science experiments in near-ambient pressure conditions, chemical inertness towards ambient gases (oxygen and water) is also demonstrated. Correspondingly, NiTeSe-based devices without encapsulation afford long-term efficiency, as demonstrated by the direct implementation of a NiTeSe-based microwave receiver with a room-temperature photocurrent of 2.8 µA at 28 GHz and more than two orders of magnitude linear dynamic range. The findings are essential to bringing to fruition type-II Dirac fermions in photonics, spintronics, and optoelectronics. |
| Keywords: | Dirac fermions density functional theory calculations device implementation surface science topological materials |