A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor |
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Authors: | Akahane N Sugawa S Adachi S Mori K Ishiuchi T Mizobuchi K |
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Affiliation: | Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan; |
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Abstract: | In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in nonsaturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. The floating diffusion capacitance of the CMOS image sensor is as small as that of a four transistors type CMOS image sensor because the lateral overflow integration capacitor is located next to the reset switch. A 1/3-inch VGA format (640/sup H//spl times/480/sup V/ pixels), 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel color CMOS image sensor fabricated through 0.35-/spl mu/m two-poly three-metal CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity. |
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